The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generation's electronic circuits and for their widespread application in all the areas of industry. In this aspect the analysis of new efficient and advanced electronic elements and circuits is an essential field of the highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides has been investigated since 1970 and it is a promising technology for constructing new electronic…mehr
The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generation's electronic circuits and for their widespread application in all the areas of industry. In this aspect the analysis of new efficient and advanced electronic elements and circuits is an essential field of the highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides has been investigated since 1970 and it is a promising technology for constructing new electronic memories. It has been established that such oxide materials have the ability for changing their conductance in accordance to the applied voltage and memorizing their state for a long-time interval. Similar behaviour has been predicted for the memristor element by Leon Chua in 1971. The memristor is proposed in accordance to symmetry considerations and the relationships between the four basic electric quantities - electric current i, voltage v, charge q and magnetic flux Ψ. The memristor is an essential passive one-port element together with the resistor, inductor, and capacitor. The Williams HP research group has made a link between resistive switching devices, and the memristor proposed by Chua. A number of scientific papers related to memristors and memristor devices have been issued and several memristor models have been proposed. The memristor is a highly nonlinear component. It relates the electric charge q and the flux linkage, expressed as a time integral of the voltage. The memristor element has the important capability for remembering the electric charge passed through its cross-section and its respective resistance, when the electrical signals are switched off. Due to its nano-scale dimensions, non-volatility and memorizing properties, the memristor is a sound potential candidate for application in computer high-density memories, artificial neural networks and in many other electronic devices.
Valeri Mladenov received his PhD from Technical University of Sofia (TU Sofia), Bulgaria in 1993. In 2004, he became a Head of the Department of Theory of Electrical Engineering. Since June 2011, he has been Dean of the Faculty of Automation, since December 2011 he has been Vice Rector of TU Sofia, and since December 2015 he has been Director of the Directorate of Information and Public Relations. In 2014, he has been Deputy Minister of Education and Science in the Caretaker Government in Bulgaria. He is a guest lecturer at the Faculty of Electrical Engineering, Eindhoven University of Technology, The Netherlands, and many others. Dr. Mladenov's research interests are in the field of nonlinear circuits and systems, neural networks, artificial intelligence, applied mathematics, and signal processing. He has received many international research fellowships. He has more than 250 scientific papers in professional journals and conferences. He is a co author of ten books and manuals for students. He has received many research grants from the Technical University of Sofia, Bulgarian Ministry of Education and Science, DAAD-Germany, NWO-The Netherlands, Royal Society-UK, NATO, TEMPUS, and others, and also with his team he has participated in many national and international projects-H2020, FP7, COST, Erasmus+ K1 and K2, DFG, and others. As a member of several editorial boards, Dr. Mladenov serves as a reviewer for a number of professional journals and conferences. He is a member of the International Neural Network Society (INNS), a member of the International Council of Large Electric Systems (SIGRE), a Senior Member of IEEE, a member of the IEEE Circuit and Systems Technical Committee on Cellular Nanoscale Networks and Array Computing, and Educational Activities Officer of the Bulgarian IEEE section. He is also a member of the Steering Committee of the International Symposium on Theoretical Electrical Engineering (ISTET), a member of the Management Boards of the Scientific and Technical Union of the Power Engineers, and a member of the Union of Automation and Informatics in Bulgaria
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