The quality of physical models is decisive for the understanding of the physical processes in semiconductor devices and for a reliable prediction of the behavior of a new generation of devices. The first part of the book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work, an extensive collection of widely used models is discussed in terms of physical accuracy and application results. The second part outlines the derivation of physics-based models for bulk mobility,…mehr
The quality of physical models is decisive for the understanding of the physical processes in semiconductor devices and for a reliable prediction of the behavior of a new generation of devices. The first part of the book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work, an extensive collection of widely used models is discussed in terms of physical accuracy and application results. The second part outlines the derivation of physics-based models for bulk mobility, band-to-band tunneling, defect-assisted tunneling, thermal recombination, non-ideal metal-semiconductor contact, and direct and multiphonon-assisted tunneling through insulating layers, all from a microscopic level. The models are compared with experimental data and applied to a number of simulation examples. This part also describes some new approaches of "taylored quantum mechanics for deriving device models from "first principles and the fundamental problems therein.
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Inhaltsangabe
Simulation of Silicon Devices: An Overview.- Mobility Model for Hydrodynamic Transport Equations.- Advanced Generation-Recombination Models.- Metal-Semiconductor Contact.- Modeling Transport Across Thin Dielectric Barriers.- Summary and Outlook
1 Simulation of Silicon Devices: An Overview.- 1.1 Transport Models.- 1.2 Review of Physical Models for Drift-Diffusion Equations.- 1.3 Simulation Example: Gated Diode.- References.- 2 Mobility Model for Hydrodynamic Transport Equations.- 2.1 Analytical Model of the Electron Mobility.- 2.2 Parameter Fit and Comparison with Experimental Data.- 2.3 Hole Mobility.- 2.4 Simulation Results.- References.- 3 Advanced Generation-Recombination Models.- 3.1 Band-to-Band Tunneling.- 3.2 Defect-Assisted Tunneling.- 3.3 Numerical Simulation of Tunnel Generation Currents.- 3.4 Coupled Defect-Level Recombination.- References.- 4 Metal-Semiconductor Contact.- 4.1 Emission Current Through a Parabolic Barrier.- 4.2 Interpolation Scheme for the Transmission Probability.- 4.3 Analytical Model of the Contact Current.- 4.4 Boundary Conditions for Device Simulation.- 4.5 Comparison with Measurements.- 4.6 Results of Numerical Simulation.- References.- 5 Modeling Transport Across Thin Dielectric Barriers.- 5.1 One-Step Tunneling.- 5.2 Two-Step Multiphonon-Assisted Tunneling.- 5.3 Resonant Tunneling.- 5.4 Comparison of Two-Step Zero-Phonon Tunneling and Resonant Tunneling.- 5.5 Simulation of the Long-Term Charge Loss in EPROMs.- References.- 6 Summary and Outlook.- References.- Appendices.- B Evaluation of a Double Integral.- C Transmission Probability for a Parabolic Barrier.- D Asymptotic Forms and Interpolation of Cylinder Functions.- E Energy Limit for Gaussian Approximation.- G Probability of Resonant Tunneling.- References.- List of Figures.- List of Tables.
Simulation of Silicon Devices: An Overview.- Mobility Model for Hydrodynamic Transport Equations.- Advanced Generation-Recombination Models.- Metal-Semiconductor Contact.- Modeling Transport Across Thin Dielectric Barriers.- Summary and Outlook
1 Simulation of Silicon Devices: An Overview.- 1.1 Transport Models.- 1.2 Review of Physical Models for Drift-Diffusion Equations.- 1.3 Simulation Example: Gated Diode.- References.- 2 Mobility Model for Hydrodynamic Transport Equations.- 2.1 Analytical Model of the Electron Mobility.- 2.2 Parameter Fit and Comparison with Experimental Data.- 2.3 Hole Mobility.- 2.4 Simulation Results.- References.- 3 Advanced Generation-Recombination Models.- 3.1 Band-to-Band Tunneling.- 3.2 Defect-Assisted Tunneling.- 3.3 Numerical Simulation of Tunnel Generation Currents.- 3.4 Coupled Defect-Level Recombination.- References.- 4 Metal-Semiconductor Contact.- 4.1 Emission Current Through a Parabolic Barrier.- 4.2 Interpolation Scheme for the Transmission Probability.- 4.3 Analytical Model of the Contact Current.- 4.4 Boundary Conditions for Device Simulation.- 4.5 Comparison with Measurements.- 4.6 Results of Numerical Simulation.- References.- 5 Modeling Transport Across Thin Dielectric Barriers.- 5.1 One-Step Tunneling.- 5.2 Two-Step Multiphonon-Assisted Tunneling.- 5.3 Resonant Tunneling.- 5.4 Comparison of Two-Step Zero-Phonon Tunneling and Resonant Tunneling.- 5.5 Simulation of the Long-Term Charge Loss in EPROMs.- References.- 6 Summary and Outlook.- References.- Appendices.- B Evaluation of a Double Integral.- C Transmission Probability for a Parabolic Barrier.- D Asymptotic Forms and Interpolation of Cylinder Functions.- E Energy Limit for Gaussian Approximation.- G Probability of Resonant Tunneling.- References.- List of Figures.- List of Tables.
Rezensionen
"... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field who wants to know what can and cannot be done, and a useful source of reference for experienced users ..." Microelectronics Journal
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