One of the first books to cover advanced silicon-based technologies, this volume presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The book focuses on both single crystalline silicon and polycrystalline silicon, covering the chemistry and technology of material fabrication, physics and material properties, and device applications. It shows how the electronic and optical properties of SiGe strained layers make these materials suitable for advanced applications in high-speed transistors and diodes, and…mehr
One of the first books to cover advanced silicon-based technologies, this volume presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The book focuses on both single crystalline silicon and polycrystalline silicon, covering the chemistry and technology of material fabrication, physics and material properties, and device applications. It shows how the electronic and optical properties of SiGe strained layers make these materials suitable for advanced applications in high-speed transistors and diodes, and optical detectors for night vision systems. With contributors from leading academic and industrial research centers, the book contains extensive references to primary research papers.
Preface. Introduction. Part one: Sincle crystalline silicon and its alloys. Heavy doping effects in silicon (P/Van Miegham and R P Mertens). Defects in crystalline silicon (C Claeys and J Vanhellemont). Molecular beam epitaxy of silicon, silicon alloys and metals (E Kasper and C M Falco). Low thermal budget chemical vapour deposition techniques for Si and SiGe (M R Caymax and W Y Leong). Materials properties of (strained) SiGe layers (J Poortmans, S C Jain, J Nijs and R Van Overstraeten). SiGe heterojunction bipolar application (J Poortmans, S C Jain And J Nijs). Field-effect transistors, infrared detectors, and resonant tunneling devices in silicon/silicon-germanium and ^D*d-doped silicon (M Willander). Crystalline silicon-carbide and its applications (T Sugii). Part Two: Polycrystalline silicon. Large Grain Polysilicon Substrates for Solar Cells, Properties, analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn). Application and Technology of polysilicon thin film transistors for liquid crystal displays. (C Baert) The use of polycrystalline silicon and its alloys in VLSI applications (M Y Ghannam). Biographical details. Keyword index.
Preface. Introduction. Part one: Sincle crystalline silicon and its alloys. Heavy doping effects in silicon (P/Van Miegham and R P Mertens). Defects in crystalline silicon (C Claeys and J Vanhellemont). Molecular beam epitaxy of silicon, silicon alloys and metals (E Kasper and C M Falco). Low thermal budget chemical vapour deposition techniques for Si and SiGe (M R Caymax and W Y Leong). Materials properties of (strained) SiGe layers (J Poortmans, S C Jain, J Nijs and R Van Overstraeten). SiGe heterojunction bipolar application (J Poortmans, S C Jain And J Nijs). Field-effect transistors, infrared detectors, and resonant tunneling devices in silicon/silicon-germanium and ^D*d-doped silicon (M Willander). Crystalline silicon-carbide and its applications (T Sugii). Part Two: Polycrystalline silicon. Large Grain Polysilicon Substrates for Solar Cells, Properties, analysis and modelling of polysilicon TFTs (P Migliorato and M Quinn). Application and Technology of polysilicon thin film transistors for liquid crystal displays. (C Baert) The use of polycrystalline silicon and its alloys in VLSI applications (M Y Ghannam). Biographical details. Keyword index.
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