Karl Hess

Advanced Theory of Semiconductor Devices

• Gebundenes Buch

Produktbeschreibung

Electrical Engineering Advanced Theory of Semiconductor Devices Semiconductor devices are ubiquitous in today's world and are found increasingly in cars, kitchens and electronic door locks, attesting to their presence in our daily lives. This comprehensive book provides the fundamentals of semiconductor device theory from basic quantum physics to computer-aided design. Advanced Theory of Semiconductor Devices will improve your understanding of computer simulation of devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p--n junction diodes. Close attention is also given to innovative treatments of quantum-well laser diodes and hot electron effects in silicon technology. This in-depth book is written for engineers, graduate students, and research scientists in solid-state electronics who want to gain a better understanding of the principles underlying semiconductor devices.

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Produktdetails

• Verlag: Wiley
• Revised edition
• Seitenzahl: 352
• Erscheinungstermin: 27. Dezember 1999
• Englisch
• Abmessung: 235mm x 157mm x 23mm
• Gewicht: 663g
• ISBN-13: 9780780334793
• ISBN-10: 0780334795
• Artikelnr.: 21149571

Autorenporträt

Natalie Hess is a child survivor of the Ravensbrück Concentration Camp.

Inhaltsangabe

Preface.
Acknowledgments.
A Brief Review of the Basic Equations.
The Symmetry of the Crystal Lattice.
The Theory of Energy Bands in Crystals.
Imperfections of Ideal Crystal Structure.
Equilibrium Statistics for Electrons and Holes.
Self-Consistent Potentials and Dielectric Properties.
Scattering Theory.
The Boltzmann Transport Equation.
Generation-Recombination.
The Heterojunction Barrier.
The Device Equations of Shockley and Stratton.
Numerical Device Simulations.
Diodes.
Laser Diodes.
Transistors.
Future Semiconductor Devices.
Appendix A: Tunneling and the Golden Rule.
Appendix B: The One Band Approximation.
Appendix C: Temperature Dependence of the Band Structure.
Appendix D: Hall Effect and Magnetoresistance.
Appendix E: The Power Balance Equation.
Appendix F: The Self-Consistent Potential at a Heterojunction.
Appendix G: Schottky Barrier Transport.
Index.
About the Author.