Contains a collection of papers from the below symposia held during the 10th Pacific Rim Conference on Ceramic and Glass Technology (PacRim10), June 2-7,2013, in Coronado, California 2012: - Advances in Electroceramics - Microwave Materials and Their Applications - Oxide Materials for Nonvolatile Memory Technology and Applications
Contains a collection of papers from the below symposia held during the 10th Pacific Rim Conference on Ceramic and Glass Technology (PacRim10), June 2-7,2013, in Coronado, California 2012: - Advances in Electroceramics - Microwave Materials and Their Applications - Oxide Materials for Nonvolatile Memory Technology and Applications
Pyroelectric Performances of Relaxor-Based Ferroelectric SingleCrystals and their Applications in Infrared Detectors 3 Long Li, Haosu Luo, Xiangyong Zhao, Xiaobing Li, Bo Ren, QingXu, and Wenning Di
Formation of Tough Foundation Layer for Electrical Plating onInsulator using Aerosol Deposition Method of Cu-Al203 Mixed Powder17 Naoki Seto, Shingo Hirose, Hiroki Tsuda and Jun Akedo
Formation and Electromagnetic Properties of 0.1 BTO/0.9NZFOCeramic Composite with High Density Prepared by Three-StepSintering Method 23 Bin Xiao, Juncong Wang, Ning Ma, and Piyi Du
MICROWAVE MATERIALS AND THEIR APPLICATIONS
Thin Glass Characterization in the Radio Frequency Range37 Alfred Ebberg, Jürgen Meggers, Kai Rathjen, GerhardFotheringham, Ivan Ndip, Florian Ohnimus, Christian Tschoban, IsaPieper, Andreas Kilian, Sebastian Methfessel, Martin Letz, andUlrich Fotheringham
Formation of Silver Nano Particles in Percolative Ag-PbTi03Composite Dielectric Thin Film 51 Tao Hu, Zongrong Wang, Liwen Tang, Ning Ma, and Piyi Du
Software for Calculating Permittivity of Resonators: HakCol& ErCalc 65 Rick Ubic
Effects of MgO Additive on Structural, Dielectric Properties andBreakdown Strength of Mg2Ti04 Ceramics Doped with ZnO-B203 Glass17 Xiaohong Wang, Mengjie Wang, Zhaoqiang Li, and WenzhongLu
Design of Microwave Dielectrics Based on Crystallography87 Hitoshi Ohsato
OXIDE MATERIALS FOR NONVOLATILE MEMORY TECHNOLOGY ANDAPPLICATIONS
Stable Resistive Switching Characteristics of Al203 Layers Insertedin Hf02 Based RRAM Devices 103 Chun-Yang Huang, Jheng-Hong Jieng, and Tseung-Yuen Tseng
Improvement of Resistive Switching Properties of Ti/Zr02/Pt withEmbedded Germanium 111 Chun-An Lin, Debashis Panda, and Tseung-Yuen Tseng
Nonvolatile Memories Using Single Electron Tunneling Effects inSi Quantum Dots Inside Tunnel Silicon Oxide 117 Ryuji Ohba
Resistive Switching and Rectification Characteristics withCoO/Zr02 Double Layers 123 Tsung-Ling Tsai, Jia-Woei Wu, and Tseng-Yuen Tseng
Research Of Nano-Scaled Transition Metal Oxide ResistiveNon-Volatile Memory (R-RAM) 129 ChiaHua Ho, Cho-Lun Hsu, Chun-Chi Chen, Ming-Taou Lee, Hsin-HauHuang, Kai-Shin Li, Lu-Mei Lu, Tung-Yen Lai, Wen-Cheng Chiu, Bo-WeiWu, MeiYi Li, Min-Cheng Chen, Cheng-San Wu, Yi-Ping Hsieh, andFu-Liang Yang
Pyroelectric Performances of Relaxor-Based Ferroelectric SingleCrystals and their Applications in Infrared Detectors 3 Long Li, Haosu Luo, Xiangyong Zhao, Xiaobing Li, Bo Ren, QingXu, and Wenning Di
Formation of Tough Foundation Layer for Electrical Plating onInsulator using Aerosol Deposition Method of Cu-Al203 Mixed Powder17 Naoki Seto, Shingo Hirose, Hiroki Tsuda and Jun Akedo
Formation and Electromagnetic Properties of 0.1 BTO/0.9NZFOCeramic Composite with High Density Prepared by Three-StepSintering Method 23 Bin Xiao, Juncong Wang, Ning Ma, and Piyi Du
MICROWAVE MATERIALS AND THEIR APPLICATIONS
Thin Glass Characterization in the Radio Frequency Range37 Alfred Ebberg, Jürgen Meggers, Kai Rathjen, GerhardFotheringham, Ivan Ndip, Florian Ohnimus, Christian Tschoban, IsaPieper, Andreas Kilian, Sebastian Methfessel, Martin Letz, andUlrich Fotheringham
Formation of Silver Nano Particles in Percolative Ag-PbTi03Composite Dielectric Thin Film 51 Tao Hu, Zongrong Wang, Liwen Tang, Ning Ma, and Piyi Du
Software for Calculating Permittivity of Resonators: HakCol& ErCalc 65 Rick Ubic
Effects of MgO Additive on Structural, Dielectric Properties andBreakdown Strength of Mg2Ti04 Ceramics Doped with ZnO-B203 Glass17 Xiaohong Wang, Mengjie Wang, Zhaoqiang Li, and WenzhongLu
Design of Microwave Dielectrics Based on Crystallography87 Hitoshi Ohsato
OXIDE MATERIALS FOR NONVOLATILE MEMORY TECHNOLOGY ANDAPPLICATIONS
Stable Resistive Switching Characteristics of Al203 Layers Insertedin Hf02 Based RRAM Devices 103 Chun-Yang Huang, Jheng-Hong Jieng, and Tseung-Yuen Tseng
Improvement of Resistive Switching Properties of Ti/Zr02/Pt withEmbedded Germanium 111 Chun-An Lin, Debashis Panda, and Tseung-Yuen Tseng
Nonvolatile Memories Using Single Electron Tunneling Effects inSi Quantum Dots Inside Tunnel Silicon Oxide 117 Ryuji Ohba
Resistive Switching and Rectification Characteristics withCoO/Zr02 Double Layers 123 Tsung-Ling Tsai, Jia-Woei Wu, and Tseng-Yuen Tseng
Research Of Nano-Scaled Transition Metal Oxide ResistiveNon-Volatile Memory (R-RAM) 129 ChiaHua Ho, Cho-Lun Hsu, Chun-Chi Chen, Ming-Taou Lee, Hsin-HauHuang, Kai-Shin Li, Lu-Mei Lu, Tung-Yen Lai, Wen-Cheng Chiu, Bo-WeiWu, MeiYi Li, Min-Cheng Chen, Cheng-San Wu, Yi-Ping Hsieh, andFu-Liang Yang
Author Index 137
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