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In this book, some fundamental issues regarding the limitation of ultra thin silicon dioxide as gate dielectric are discussed. The scaling limit of silicondioxide and high leakage currents, indicate a need for an alternate gate dielectric to meet the industries demand for greater integrated circuit functionality and performance at lower cost. Alumina fulfills many of the requirements of a high K dielectric for MOS applications. The present book explains the result of growing high quality alumina films on silicon substrate by PLD (pulse laser deposition) to improve the leakage current and breakdown strength.