Amorphous Silicon Carbide for MEMS Applications
Process Development and Techniques of Integration with Stereolithographic Structures
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This work describes the development of MEMS fabrication techniques for amorphous Silicon Carbide (a-SiC). Mechanical and chemical characterization studies demonstrate the extensive applicability of a-SiC to a wide variety of MEMS applications due its high Young's modulus and chemical resistivity to most common MEMS etchants. Techniques for patterning a-SiC have been also been developed in this work. Integration of a-SiC based MEMS devices with Stereolithography is explored in this work and a method of integration of stereolithographic structures into MEMS devices with high alignment accuracy i...
This work describes the development of MEMS fabrication techniques for amorphous Silicon Carbide (a-SiC). Mechanical and chemical characterization studies demonstrate the extensive applicability of a-SiC to a wide variety of MEMS applications due its high Young's modulus and chemical resistivity to most common MEMS etchants. Techniques for patterning a-SiC have been also been developed in this work. Integration of a-SiC based MEMS devices with Stereolithography is explored in this work and a method of integration of stereolithographic structures into MEMS devices with high alignment accuracy is described. The test case used in this work to demonstrate the applicability of a-SiC to MEMS is a microscaled four point probe.
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