Sheldon Datz, B. R. Appleton, C. D. Moak

Atomic Collisions in Solids

Volume 2

• Broschiertes Buch

Produktbeschreibung

Perhaps the most controversial aspeat of this volume is the number (V) assigned to the aonferenae in this series. Actually, the first aonferenae to be held under the title '~tomia Collisions in Solids" was held at Sussex University in England in 1969 and the seaond at Gausdal, Norway in 19?1, whiah would logically make the aonferenae held at Gatlinburg, Tennessee, U. S. A. in 19?3 the third (III). However, the appearance of the proceedings of the 19?1 Gausdal Conference (published by Gordon and Breaahj bore the number IV. The reasoning behind this was that, in. faat, two pre vious aonferenaes had been largely dedicated to the same subjeat area. The first of these was at Aarhus, Denmark in 1965 and the seaond in 196? was held in Chalk River, Canada. Henae, the number V for the 19?3 meeting. Actually, the aonferenae aan easily be traaed baak to Paris, Franae in 196l when it went under the colorful title of '~e Bom bardement Ionique. " In 1962 a small aonferenae was held at Oak Ridge, Tennessee, U. S. A. at whiah the discovery of channeling was first formally annunciated. This was followed by aonferenaes at Chalk River, Canada in 1963 and at Harwell, England in 1964. More over, immediately following the Chalk River conference in 196? there was a aonferenae on higher energy collisions at Brookhaven, New York, U. S. A. Thus, strictly speaking, the Gatlinburg meeting is the tenth (X) in the series.

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Produktdetails

• Verlag: Springer / Springer US / Springer, Berlin
• Artikelnr. des Verlages: 978-1-4615-8998-3
• Softcover reprint of the original 1st ed. 1975
• Seitenzahl: 484
• Erscheinungstermin: 1. Juli 2013
• Englisch
• Abmessung: 254mm x 178mm x 27mm
• Gewicht: 902g
• ISBN-13: 9781461589983
• ISBN-10: 1461589983
• Artikelnr.: 41322398

Inhaltsangabe

of Volume 2.- Section VI: Electrons, Photons, and Channeling.- Radiative Electron Capture and Bremsstrahlung.- Radiative Electron Capture by Channeled Oxygen Ions.- The Influence of Channeling on the Shape and Intensity of Doppler-Broadened Spectral Lines Produced by Light Ion Bombardment of Metals.- Optical Line and Broad-Band Emission from Ion-Bombarded Targets.- Reduction of the Characteristic Radiation Due to the Channeling Effect.- Electron Channeling in Si, Ag and Au Crystals.- Emission of Electrons and Positrons from Crystals - Directional Effects.- Channeling of 25 MeV Positrons and Electrons.- The Channeling-Blocking Effect of Energetic Electrons.- Coherent Photon Emission by Fast Particle Excited Atoms in Electromagnetic Field.- Effect of the Levels of the Transverse Motion of Electrons on the Electromagnetic Processes in Monocrystals.- Section VII: Surface Scattering.- Medium-Energy Ion Scattering by Crystal Surfaces.- Some Directional Effects in Forward Ion Scattering by Crystal Surfaces.- On the Scattering of Low Energy H+ and He+ Ions from a (001) Copper Surface.- Influence of Thermal Lattice Vibrations on Multiple Ion Scattering.- X-Ray Production and Energy Loss in Low-Angle Ion Scattering at Solid Surfaces.- Surface Scattering of Low Energy Ions.- Hybrid Computational Studies of Elastic Scattering of Atoms.- Sputtering of Condensed Gases by Proton Bombardment.- The Angular Distribution of Fast Charged Particles Reflected by the Surface of a Single Crystal.- Section VIII: Channeling.- Hyperchanneling.- Channeling Studies of Alkali Halides.- Molecular Ion Transmission Through a Monocrystalline Thin Film.- A Combination of Dechanneling and Energy Measurements of Protons in Thin Silicon Single Crystals.- Flux Peaking, Dechanneling Cross Section, andDetection Probability in Channeling and Blocking Experiments from Computer Simulations and Analytical Models.- Analysis of Blocking Lifetime Experiments.- Channeling, Blocking, and Range Measurements Using Thermal Neutron Induced Reactions.- Experimental Investigation of the Reversibility Rule at Non Zero Depth.- Effect of Reaction Time on the Minimum Yields of Axial and Planar Blockings.- High Index Planar Channeling in Silicon.- Section IX: Channeling.- Double Planar Alignment Scattering with a Very Thin Crystal.- Axial and Planar Channeling in TiOx System.- Energy Dependence of the Surface Minimum Yield for Axial Channeling.- Experimental Study and Stochastic Interpretation of Oscillatory Effects in Backscattering Spectra in Planar Channeling.- Interstital Atom Location in Silicon by Single and Double Alignment Backscattering of MeV Helium Ions.- Section X: Dechanneling.- Validity of the Statistical Equilibrium Hypothesis for Channeling.- Axial Dechanneling, I. A Theoretical Study.- Axial Dechanneling, II. An Experimental Study.- Dechanneling and Rechanneling Calculations.- Modified Dechanneling Theory and Diffusion Coefficients.- Inelastic Scattering in Channeling.- Channeling in a Non Perfect Crystal.- Transmission Energy Spectra of Channeled Protons Scattered in Thin Silicon Films.- Interference Decrease of Elastic Scattering of Fast Charged Particles in Single Crystals.