Andere Kunden interessierten sich auch für
![An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors]( "An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors")
An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors60,99 €![Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors]( "Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors")
Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors60,99 €![Sensitivity Analysis of Algan/Gan High Electron Mobility Transistors to Process Variation]( "Sensitivity Analysis of Algan/Gan High Electron Mobility Transistors to Process Variation")
Sensitivity Analysis of Algan/Gan High Electron Mobility Transistors to Process Variation61,99 €![Measurement of Radiation Damage in Organic Materials in the Range of Electron Energy Between 200 keV and 650 keV]( "Measurement of Radiation Damage in Organic Materials in the Range of Electron Energy Between 200 keV and 650 keV")
Measurement of Radiation Damage in Organic Materials in the Range of Electron Energy Between 200 keV and 650 keV60,99 €![Combined Effects of Radio Frequency and Electron Radiation on CMOS Inverters]( "Combined Effects of Radio Frequency and Electron Radiation on CMOS Inverters")
Combined Effects of Radio Frequency and Electron Radiation on CMOS Inverters60,99 €![Investigation of Gate Current In Neutron Irradiated AlxGa1-xN/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence]( "Investigation of Gate Current In Neutron Irradiated AlxGa1-xN/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence")
Investigation of Gate Current In Neutron Irradiated AlxGa1-xN/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence61,99 €![An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates]( "An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates")
An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates60,99 €
The effects of radiation on semiconductors are extremely important to the Department of Defense since the majority of the defense informational, navigational and communications systems are now satellite-based. Due to the high radiation tolerance of gallium nitride and a plethora of high temperature, high power and high frequency applications, the prospect that gallium nitride based devices will become key components in a multitude of military satellite-based systems is highly probable. AlxGa1-xN/GaN HEMTs were irradiated at low temperature (~80 K) by 0.45 - 0.8 MeV electrons up to fluences of 1 1015 e-/cm2. Following irradiation, low temperature capacitance-voltage measurements were recorded providing fluence-dependent measurements; additionally low-temperature post-irradiation capacitance-voltage measurements were recorded at twenty-four hour intervals up to 168 hours in order to investigate the room temperature annealing process. Using previously irradiated devices, the effects of a 9 month room temperature anneal were also considered. Capacitance-voltage measurements indicate that low energy electron radiation results in an increase in the transistor channel drain current.