Charge-Trapping Non-Volatile Memories

Volume 2--Emerging Materials and Structures
Herausgegeben:Dimitrakis, Panagiotis

• Gebundenes Buch

Produktbeschreibung

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.

Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
Details new architectures and current modeling concepts for non-volatile memory devices;
Focuses on conduction through multi-layer gate dielectrics stacks.

Produktdetails

• Verlag: Springer / Springer International Publishing / Springer, Berlin
• Artikelnr. des Verlages: 978-3-319-48703-8
• 1st ed. 2017
• Seitenzahl: 220
• Erscheinungstermin: 22. Februar 2017
• Englisch
• Abmessung: 241mm x 160mm x 18mm
• Gewicht: 444g
• ISBN-13: 9783319487038
• ISBN-10: 3319487035
• Artikelnr.: 46000643

Autorenporträt

Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.

Inhaltsangabe

Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.

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Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.