Henry Radamson, Eddy Simoen, Jun Luo

CMOS Past, Present and Future

• Broschiertes Buch

Produktbeschreibung

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.

The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.

Produktdetails

• Woodhead Publishing Series in Electronic and Optical Materials
• Verlag: Elsevier Science & Technology / Woodhead Publishing
• Artikelnr. des Verlages: C2016-0-03462-9
• Englisch
• Abmessung: 13mm x 152mm x 229mm
• Gewicht: 460g
• ISBN-13: 9780081021392
• Artikelnr.: 49034305

Autorenporträt

Henry H. Radamson received an M.Sc. degree in physics and the Ph.D. degree in semiconductor materials from Linköping University in Sweden, in 1989 and 1996, respectively. In 1997, he joined the Royal Institute of Technology in Stockholm as a senior scientist, where he has been an Associate Professor since 2001.

Eddy Simoen is a Senior Researcher at IMEC, where he is currently involved in research on the defect and strain engineering in high-mobility and epitaxial substrates and defect studies in germanium and III-V compounds.

Dr. Jun Luo joined the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), Beijing, China in August, 2010. His current research interests cover the CMOS technology, Si/SiGe devices and process technology, energy harvesting devices based on Si technology and GaN-on-Si HEMTs.

Inhaltsangabe

1. Brief introduction CMOS applications in our daily life
2. Basic definitions and equations
3. Electrical measurements (IV, short channel effects, mobility and noise)
4. CMOS Architecture
5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners)
6. High-k and metal gate (Almost all known high-k materials and metal gates)
7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds)
8. Contacts (Silicide formation, contact resistance, parasitic contacts)
9. Integration with photonic components (CMOS with lasers, detectors)
10. Technology roadmap (starting from 50's to unknown future)
11. Authors' final words