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The lingering demand from the industry for small and low-power consumer electronics motivates us to seek new ways for design enhancements. With numerous technologies available and upcoming for the fabrication of semiconducting devices, the selection of technology that can be termed as the future of industry requires weighing them against various requirements, constraints, and parameters. Some New Low-Power High-Speed Full Adder Circuits Using Carbon Nanotube Field Effect Transistor for Real-Time, Fault-Tolerant, and Mission-Critical Applications is presented.

Produktbeschreibung
The lingering demand from the industry for small and low-power consumer electronics motivates us to seek new ways for design enhancements. With numerous technologies available and upcoming for the fabrication of semiconducting devices, the selection of technology that can be termed as the future of industry requires weighing them against various requirements, constraints, and parameters. Some New Low-Power High-Speed Full Adder Circuits Using Carbon Nanotube Field Effect Transistor for Real-Time, Fault-Tolerant, and Mission-Critical Applications is presented.
Autorenporträt
Dr. Jitendra Kumar Saini was born in Jaipur, Rajasthan, India. He received his B.E., M.Tech. and Ph.D. degree ECE from Birla Institute of Technology, Mesra; Malviya National Institute of Technolgy, Jaipur & Manipal University Jaipur. Currently, he is an Associate Professor in the E.C.E. department at Vignan's LARA Institute of Technology & Science.