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This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.

Produktbeschreibung
This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models.
Autorenporträt
Samar K. Saha holds a Ph.D from Gauhati University, and an M.S.EM from Stanford University. He is currently adjunct professor at Santa Clara University, technical advisor at Ultrasolar Technology, distinguished lecturer and 2016-2017 president of the IEEE Electron Devices Society, and fellow of the Institution of Engineering and Technology. He previously worked for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta, and served as a faculty member at Southern Illinois University at Carbondale, Auburn University, University of Nevada at Las Vegas, and the University of Colorado at Colorado Springs.