This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts.…mehr
This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts.Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Samar K. Saha holds a Ph.D from Gauhati University, and an M.S.EM from Stanford University. He is currently adjunct professor at Santa Clara University, technical advisor at Ultrasolar Technology, distinguished lecturer and 2016-2017 president of the IEEE Electron Devices Society, and fellow of the Institution of Engineering and Technology. He previously worked for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta, and served as a faculty member at Southern Illinois University at Carbondale, Auburn University, University of Nevada at Las Vegas, and the University of Colorado at Colorado Springs.
Inhaltsangabe
Introduction to Compact Models. Review of Basic Device Physics. Metal-Oxide-Semiconductor System. Large Geometry MOSFET Compact Models. Compact Models for Small Geometry MOSFETs. MOSFET Capacitance Models. Compact MOSFET Models for RF Applications. Modeling Process Variability in Scaled MOSFETs. Compact Models for Ultrathin Body FETs. Beyond-CMOS Transistor Models: Tunnel FETs. Bipolar Junction Transistor Compact Models. Compact Model Library for Circuit Simulation.
Introduction to Compact Models. Review of Basic Device Physics. Metal-Oxide-Semiconductor System. Large Geometry MOSFET Compact Models. Compact Models for Small Geometry MOSFETs. MOSFET Capacitance Models. Compact MOSFET Models for RF Applications. Modeling Process Variability in Scaled MOSFETs. Compact Models for Ultrathin Body FETs. Beyond-CMOS Transistor Models: Tunnel FETs. Bipolar Junction Transistor Compact Models. Compact Model Library for Circuit Simulation.
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