Andere Kunden interessierten sich auch für
![Optical and Electrical Properties of Fe doped TiO2 Thin Films]( "Optical and Electrical Properties of Fe doped TiO2 Thin Films")
Optical and Electrical Properties of Fe doped TiO2 Thin Films32,99 €![Microbubbles for optofluidics: controlled defects in bubble crystals]( "Microbubbles for optofluidics: controlled defects in bubble crystals")
Microbubbles for optofluidics: controlled defects in bubble crystals23,99 €![Theoretical Study of Electrical Properties of n-type GaN]( "Theoretical Study of Electrical Properties of n-type GaN")
Theoretical Study of Electrical Properties of n-type GaN23,99 €![A sneak peek in AlGaN/GaN HEMT structures using SdH Oscillations]( "A sneak peek in AlGaN/GaN HEMT structures using SdH Oscillations")
A sneak peek in AlGaN/GaN HEMT structures using SdH Oscillations51,99 €![Magnetic behavior of Fe doped Perovskites]( "Magnetic behavior of Fe doped Perovskites")
Magnetic behavior of Fe doped Perovskites32,99 €![Thermally induced doping in controlled atmosphere on Graphene]( "Thermally induced doping in controlled atmosphere on Graphene")
Thermally induced doping in controlled atmosphere on Graphene29,99 €![Fractal Phenomena In The Nanoparticles Aggregation]( "Fractal Phenomena In The Nanoparticles Aggregation")
Fractal Phenomena In The Nanoparticles Aggregation19,99 €
The epitaxial growth of hybrid structures containing magnetic impurities such as transition metal or rare earth ions, and based on wide band gap semiconductors and oxides, can lead to the self-organized aggregation of magnetic nanocrystals embedded in the host matrix. This opens new perspectives for multifunctional nanosystems in spintronics, nanoelectronics and photonics. In this view, it is necessary to achieve full control on the incorporation and aggregation of the magnetic impurities inside the semiconductor matrix to elucidate the origin of their magnetic signatures and hereby achieve a reliable functionality of these systems. In this work, we report on the growth by metalorganic vapor phase epitaxy of (Ga,Fe)N with special focus on the incorporation of Fe ions as a function of the growth parameters. We show that it is possible to a ect the aggregation of Fe ions in GaN by growth rate and growth temperature, by d-doping, and by co-doping with acceptors and donors. Our results contribute to the understanding of longstanding unexplained issues in the field of magnetic semiconductors.