Andere Kunden interessierten sich auch für
![Luminescence Studies of Zirconia Based Phosphors]( "Luminescence Studies of Zirconia Based Phosphors")
Luminescence Studies of Zirconia Based Phosphors36,99 €![Demand Response and Energy Storage for a Cost Optimal Residential Energy Supply with Renewable Generation]( "Demand Response and Energy Storage for a Cost Optimal Residential Energy Supply with Renewable Generation")
Demand Response and Energy Storage for a Cost Optimal Residential Energy Supply with Renewable Generation31,90 €![Correlation between Structural and Electronic Properties of Co-Evaporated Doped Organic Thin Films]( "Correlation between Structural and Electronic Properties of Co-Evaporated Doped Organic Thin Films")
Correlation between Structural and Electronic Properties of Co-Evaporated Doped Organic Thin Films34,90 €![Structure and Bonding in Crystalline Materials]( "Structure and Bonding in Crystalline Materials")
Structure and Bonding in Crystalline Materials98,99 €![Understanding Understanding]( "Understanding Understanding")
Understanding Understanding154,99 €![Alternative materials for crystalline silicon solar cells]( "Alternative materials for crystalline silicon solar cells")
Alternative materials for crystalline silicon solar cells58,99 €![Solid State Physics. Structure and Properties of Materials]( "Solid State Physics. Structure and Properties of Materials")
Solid State Physics. Structure and Properties of Materials52,95 €
This work investigates the crystallography and dielectric properties of Zirconium- and Hafnium-oxide based nano-scale thin film insulators for memory. Hafnium- and Zirconium-oxide are industry leading candidates for high-k dielectrics. Most application research has focused on the application of amorphous high-k due to formation of defects associated with the crystalline phase. However the application of crystalline dielectrics offers two advantages: Potentially high thermal stability, since no measures have to be taken to avoid crystallization, and the ability to manipulate crystalline phase composition to maximize dielectric constants. Pure ZrO2 crystallized at a lower temperature than HfO2 and always formed a metastable t¿ higher-k phase. ZrO2 crystallized already during deposition, leading to leakage current degradation. It was shown that this problem could be solved by SiO2 addition to raise the crystallization temperature, allowing fabrication of low leakage, low effective oxide thickness (EOT) metal-insulator-metal (MIM) capacitors suitable for stack based DRAM down to the 4X nm node.