December 16

Herausgegeben:Görlich

• Gebundenes Buch

Produktbeschreibung

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Produktdetails

• Verlag: De Gruyter
• 1989.
• Seitenzahl: 456
• Erscheinungstermin: 14. Januar 1989
• Deutsch
• Abmessung: 246mm x 175mm x 30mm
• Gewicht: 942g
• ISBN-13: 9783112480779
• ISBN-10: 3112480775
• Artikelnr.: 62912399

Inhaltsangabe

Frontmatter -- Contents -- Original Papers -- Structure; crystallography -- An Investigation of Fast Neutron Irradiation Effects on the Structure of Cu50Ti50 Metallic Glass -- The Simulation of Modulated J8 Fringes in an X-Ray Section Topograph of a Stacking Fault -- Computer Simulation of the Early Stages of Ordering in Ni-Mo Alloys -- Structure Factor Computation of RbCl and RbBr -- Interpretation of Interference Patterns Obtained from X-Ray taue Interferometers in Primary Plane Waves -- High Resolution Electron Microscopic Study of Silver Sulfide Microcrystals Formed on Silver Bromide Emulsion Grains -- Study of Special Triple Junctions and Faceted Boundaries by Means of the CSL Model -- Defects; nonelectronic transport -- Properties of Proton Exchanged Optical Waveguiding Layers in LiNbO3 and LiTaO3 -- Peculiarities of Radiation Defect Accumulation under High-Flux y-Ray and Electron Irradiation of Silicon -- Characterization of Defects in Deformed Titanium -- Diffusivity of Oxygen in the Orthorhombic YBa2Cu3OyPhase -- Carbon-Vacancy Interactions in B.C.O. Iron -- Lattice properties -- Microwave and Ultrasonic Investigations of Superionic Phase Transitions in CsDSO4 and CsDSeO4 -- Propagation of Plane Elastic Waves in LiCsSO4 Single Crystals -- The Band Structure and the Anomalous Alloying Behavior of Noble Metal Based Systems -- Comparison between Experimental Determination and Calculation of Elastic Properties of Nickel-Base Superalloys between 25 and 1200 °C -- Ferroelastic Phase Transition in LiRb4H(S04 ) 3 - H2S -- High-Pressure Raman Spectroscopic Study of the Ice Ih -»- Ice IX Phase Transition -- Effect of Loading on the Recovery of Internal Friction of an Al-1.0 wt%Mn-0.28 wt%Fe Alloy -- Surfaces, interfaces, thin films; lower-dimensional systems -- Relaxation Kinetics of a Non-Equilibrium Interface of a Multicomponent Liquid Phase-Binary Substrate on the Example of In-Ga-As/InAs System -- Surface Composition of the Ordered Fe-Co Alloys -- Pt2Al3 Formation on Evaporated and Large-Grained Al Substrates -- The Influence of Strain and Dislocations on Transport Properties of GaAs/Si Strained-Layer Heterojunctions -- Experimental Study of Oxygen Effect on the Variation of Resistivity with Temperature for Poly crystalline Selenium Thin Films -- High Temperature Metallisation for GaAs Device Processing -- Charge Injection into Si02 Films at Fields between 1 and 3 MY cm-1 after Electrical Stress -- Resistivity Increase in Thin Conducting Films Considering the Size Effect -- Electronic transport; superconductivity -- Self-Generated Chaos in n-Ge after Electron Irradiation -- The Photoplastic Effect in II-VI Compounds Mercury Cadmium Telluride -- Electrical and Optical Properties of n- and p-Type CuInTe2 -- A Method for Measuring the Resistivity of a Layered Semiconductor Perpendicular to the Layers -- Mircowave Conductivity and Thermoelectric Power of Some Ternary Salts of TCNQ and Iodine -- Magnetic properties; resonances -- Thermal Properties of Ndln3 -- MgO Powder Containing Low Concentrations of Isotopically Pure 52Cr 3+ Ions Its Application as ESR Marker -- Dielectric and optical properties -- Fundamental Optical Absorption Edge in MnGa2Te4 Single Crystals -- Uniaxial Stress-Effect on Visible and Near-Infrared Absorption Spectra of Si(phthalocyaninato) (0H)2 Epitaxial Films -- Fundamental Absorption Edge in Bismuth-Vanadate Glasses -- Device-related phenomena -- Measuring on Thin Film Electroluminescent Devices -- A Method to Determine Surface Doping and Substrate Doping Profile of n-Channel MOSFETs -- Recovery Mechanism of Lattice Defects Formed in the Collector Region for Electron-Irradiated npn Si Transistors -- Transients in p +? n+ Photodiodes -- Short Notes -- Diffusion of Impurities from Implanted Silicon Layers by Rapid Thermal Annealing -- A Study of Structural Relaxation in Glassy Pd 77.5 Cu 6.0 Si 16.5 by Microcalorimetric Measurements -- Comments on the Results of Dilatometric Studies of NH4HSeO4 Cryst