Defects in Microelectronic Materials and Devices

Herausgeber: Fleetwood, Daniel M; Schrimpf, Ronald D

• Broschiertes Buch

Produktbeschreibung

Focusing primarily on silicon-based microelectronics, Defects in Microelectronic Materials and Devices provides a comprehensive overview of recent progress made in understanding the effects of electrically active defects in microelectronic materials. The book places particular emphasis on defects that limit device quality, reliability, manufacturability, and radiation response. Notable theorists and researchers present their perspectives on defects in insulators and in semiconductors as well as hydrogen and defect-related failure mechanisms. The text also discusses compound semiconductor materials for microelectronic applications and examines new information garnered from physics and engineering models.

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Produktdetails

• Verlag: Taylor & Francis Ltd (Sales)
• Seitenzahl: 770
• Erscheinungstermin: 7. Oktober 2019
• Englisch
• Abmessung: 246mm x 178mm x 43mm
• Gewicht: 1270g
• ISBN-13: 9780367386399
• ISBN-10: 0367386399
• Artikelnr.: 58059915

Autorenporträt

Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf

Inhaltsangabe

Defects in Ultra-Shallow Junctions. Hydrogen-Related Defects in Silicon,
Germanium, and Silicon-Germanium Alloys. Defects in Strained-Si MOSFETs.
The Effect of Defects on Electron Transport in Nanometer-Scale Electronic
Devices: Impurities and Interface Roughness. Electrical Characterization of
Defects in Gate Dielectrics. Dominating Defects in the MOS System: Pb and
E0 Centers. Oxide Traps, Border Traps, and Interface Traps in SiO2. From 3D
Imaging of Atoms to Macroscopic Device Properties. Defect Energy Levels in
HfO2 and Related High-K Gate Oxides. Spectroscopic Studies of Electrically
Active Defects in High-k Gate Dielectrics. Defects in CMOS Gate
Dielectrics. Negative Bias Temperature Instabilities in High-k Gate
Dielectrics. Defect Formation and Annihilation in Electronic Devices and
the Role of Hydrogen. Toward Engineering Modeling of Negative Bias
Temperature Instability. Wear-Out and Time-Dependent Dielectric Breakdown
in Silicon Oxides. Defects Associated with Dielectric Breakdown in
SiO2-Based Gate Dielectrics. Defects in Thin and Ultrathin Silicon
Dioxides. Structural Defects in SiO2-Si Caused by Ion Bombardment. Impact
of Radiation-Induced Defects on Bipolar Device Operation. Silicon
Dioxide-Silicon Carbide Interfaces: Current Status and Recent Advances.
Defects in SiC. Defects in Gallium Arsenide. Appendix: Selected High-Impact
Journal Articles on Defects in Microelectronic Materials and Devices.