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Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta
doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta
like confinement of impurities in GaAs K. H. Ploog; 4. Flow
rate modulation epitaxy (FME) of III
V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta
doped III
V semiconductors D. Ritter; 6. Solid phase epitaxy for delta
doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.
J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta
doped semiconductors H. S. Luftmann; 9. Capacitance
voltage profiling E. F. Schubert; 10. Redistribution of impurities in III
V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta
doped silicon films H.
J. Gossmann; 12. Characterisation of silicon and delta
doped structures in GaAs R. C. Newman; 13. The DX
center in silicon delta
doped GaAs and AlxGa1
xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta
doped III
V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta
doped quantum wells W. T. Masselink; 17. Electron mobility in delta
doped layers P. M. Koenraad; 18. Hot electrons in delta
doped GaAs M. Asche; 19. Ordered delta
doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta
doped channel III
V field effect transistors (FETs) W.
P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.
