E. F. Schubert (ed.)

Delta-Doping of Semiconductors

Herausgeber: Schubert, E. F.

• Gebundenes Buch

Produktbeschreibung

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

Table of contents:
Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta-doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta-like confinement of impurities in GaAs K. H. Ploog; 4. Flow-rate modulation epitaxy (FME) of III-V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta-doped III-V semiconductors D. Ritter; 6. Solid phase epitaxy for delta-doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.-J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta-doped semiconductors H. S. Luftmann; 9. Capacitance-voltage profiling E. F. Schubert; 10. Redistribution of impurities in III-V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta-doped silicon films H.-J. Gossmann; 12. Characterisation of silicon and delta-doped structures in GaAs R. C. Newman; 13. The DX-center in silicon delta-doped GaAs and AlxGa1-xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta-doped quantum wells W. T. Masselink; 17. Electron mobility in delta-doped layers P. M. Koenraad; 18. Hot electrons in delta-doped GaAs M. Asche; 19. Ordered delta-doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta-doped channel III-V field effect transistors (FETs) W.-P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology.

A comprehensive review of the theory and application of delta-doping of semiconductors.

Produktdetails

• Verlag: Cambridge-Hitachi
• Seitenzahl: 616
• Erscheinungstermin: März 1996
• Englisch
• Abmessung: 247mm x 174mm x 38mm
• Gewicht: 1453g
• ISBN-13: 9780521482882
• ISBN-10: 0521482887
• Artikelnr.: 54581242

Inhaltsangabe

Part I: 1. Introduction E. F. Schubert; Part II: 2. Electronic structure of delta
doped semiconductors C. R. Proetto; Part III: 3. Recent progress in delta
like confinement of impurities in GaAs K. H. Ploog; 4. Flow
rate modulation epitaxy (FME) of III
V semiconductors T. Makimoto and Y. Horikoshi; 5. Gas source molecular beam epitaxy (MBE) of delta
doped III
V semiconductors D. Ritter; 6. Solid phase epitaxy for delta
doping in silicon I. Eisele; 7. Low temperature MBE of silicon H.
J. Gossmann; Part IV: 8. Secondary ion mass spectrometry of delta
doped semiconductors H. S. Luftmann; 9. Capacitance
voltage profiling E. F. Schubert; 10. Redistribution of impurities in III
V semiconductors E. F. Schubert; 11. Dopant diffusion and segregation in delta
doped silicon films H.
J. Gossmann; 12. Characterisation of silicon and delta
doped structures in GaAs R. C. Newman; 13. The DX
center in silicon delta
doped GaAs and AlxGa1
xAs P. M. Koenraad; Part V: 14. Luminescence and ellipsometry spectroscopy H. Yao and E. F. Schubert; 15. Photoluminescence and Raman spectroscopy of single delta
doped III
V semiconductor heterostructures J. Wagner and D. Richards; 16. Electron transport in delta
doped quantum wells W. T. Masselink; 17. Electron mobility in delta
doped layers P. M. Koenraad; 18. Hot electrons in delta
doped GaAs M. Asche; 19. Ordered delta
doping R. L. Headrick, L. C. Feldman and B. E. Weir; Part IV: 20. Delta
doped channel III
V field effect transistors (FETs) W.
P. Hong; 21. Selectively doped heterostructure devices E. F. Schubert; 22. Silicon atomic layer doping FET K. Nakagawa and K. Yamaguchi; 23. Planar doped barrier devices R. J. Malik; 24. Silicon interband and intersubband photodetectors I. Eisele; 25. Doping superlattice devices E. F. Schubert.