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Design and analysis of class-E power amplifier a 4GHz band for mobile application is introduced. This work designed Class-E power amplifier with load network and a single transistor without excessive reactance at higher frequency to solve the problems such as: Power dissipation in the active device, Variation in supply voltage and Inductance constraint using Narrow band amplifier design. The model of Class-E Power amplifier is designed and presented in this research work. It is proved successful through verification in the multisim circuit simulator. Deriving an expression to obtain the…mehr

Produktbeschreibung
Design and analysis of class-E power amplifier a 4GHz band for mobile application is introduced. This work designed Class-E power amplifier with load network and a single transistor without excessive reactance at higher frequency to solve the problems such as: Power dissipation in the active device, Variation in supply voltage and Inductance constraint using Narrow band amplifier design. The model of Class-E Power amplifier is designed and presented in this research work. It is proved successful through verification in the multisim circuit simulator. Deriving an expression to obtain the correct optimal switching condition was carried out in order to prove this theory correct. The calculation 100%, simulation 98.42% and experimental 90.34% design of Class-E power amplifier with load network and a single transistor was carried out, the overall efficiency were achieved, powered with 1.8V dc. The amplifier was operated at band frequency of 4GHz and 50% duty cycle for a stable sinusoidal signal.Therefore, it can be concluded that the optimum operation can be achieved only at an optimum load resistance,R2= R1. at R2 = R1the sinusoidal output voltage will reach nearly to maximum.
Autorenporträt
Iam Nasiru Abubakar de la zona de Gwadangaji Kabawa Birnin kebbi, Estado de Kebbi, Nigeria. Y actualmente es profesor del departamento de física de la Universidad Federal de Electrónica Birnin Kebbi.