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Special interest has developed the CdZnTe system; known to be a good candidate for lattice matched substrate for growth of Hg Cd Te and Hg Zn Te epitaxial thin films. In addition CdZnTe and CdTe crystals are important materials for the development of high resolution for infrared and radiation detectors. However, CdTe suffers from weak collection efficiency and high impurity and native defect densities, which favored CdZnTe as more attractive material for such nuclear applications. In order to obtain a technologically competitive material, it is necessary to grow the material, study and then…mehr

Produktbeschreibung
Special interest has developed the CdZnTe system; known to be a good candidate for lattice matched substrate for growth of Hg Cd Te and Hg Zn Te epitaxial thin films. In addition CdZnTe and CdTe crystals are important materials for the development of high resolution for infrared and radiation detectors. However, CdTe suffers from weak collection efficiency and high impurity and native defect densities, which favored CdZnTe as more attractive material for such nuclear applications. In order to obtain a technologically competitive material, it is necessary to grow the material, study and then controls the effect of impurities and native defects on the electrical and other properties of the material.As a consequence of suppression of crystal crucible interaction, most of the crystals grown in space have shown a better structural quality than crystals obtained on the earth under the same conditions.
Autorenporträt
Dr. A. A. Ebnelwaled Studied Physics at South Valley University, Qena, Egypt. He deal with materials science.