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In spite of the recent p-type oxide TFTs developments based on SnO and CuO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present book presents the study and optimization of p-type TFTs based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped SnO, Cu-doped SnO and In-doped SnO.