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Electrical activation studies of silicon implanted AlxGa1-xN grown on sapphire substrates were conducted as a function of ion dose, anneal temperature, and anneal time. Silicon ion doses of 1x10 13, 5x10 13, and 1x10 14 cm -2 were implanted in AlxGa1-xN samples with aluminum mole fractions of 0.1 and 0.2 at an energy of 200 keV at room temperature. The samples were annealed at temperatures 1100 to 1350 degrees C and anneal times 20 to 40 minutes. The Hall coefficient and resistivity were measured using room temperature Hall effect measurements. Activation efficiencies of almost 100% were achieved for Al0.2Ga0.8N samples having doses of 5x10 13 cm-2 after annealing at 1350 and 1300 degrees C, respectively, for 20 minutes. After annealing at 1250 degrees C for 20 minutes, 87% efficiency was achieved for Al0.1Ga0.9N implanted with 1x10 14 cm -2 silicon ions. The largest mobility was 89 cm2/V-s for Al0.1Ga0.9N implanted with 1x10 14 cm -2 and 5x10 13 cm-2 silicon ions and annealed at 1250 degrees C for 20 minutes and at 1200 degrees C for 40 minutes, respectively. The optimal anneal condition to maximize electrical activation efficiency and minimize nitrogen dissociation damage for Al0.1Ga0.9N was 1200 degrees C anneal for 30 minutes. The mobilities, sheet carrier concentrations, and electrical activation efficiencies generally increased.
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