Paul S. Ho (Austin University of Texas), Chao-Kun Hu, Martin Gall

Electromigration in Metals

Fundamentals to Nano-Interconnects

• Gebundenes Buch

Produktbeschreibung

Learn to assess electromigration reliability, and design more resilient chips, from this comprehensive resource. Building from fundamental physics to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. This is an ideal text for materials scientists and chip design engineers.

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Produktdetails

• Verlag: Cambridge University Press
• Seitenzahl: 430
• Erscheinungstermin: 8. September 2022
• Englisch
• Abmessung: 251mm x 175mm x 19mm
• Gewicht: 978g
• ISBN-13: 9781107032385
• ISBN-10: 1107032385
• Artikelnr.: 63223781

Autorenporträt

Paul Ho is Professor Emeritus in the Department of Mechanical Engineering and the Texas Materials Institute at the University of Texas at Austin. He has received research awards from the Electrochemical Society, IEEE, IITC and Semiconductor Industry Association, among others.

Inhaltsangabe

1. Introduction to electromigration; 2. Fundamentals of electromigration;
3. Thermal stress characteristics and stress induced void formation in
aluminium and copper interconnects; 4. Stress evolution and damage
formation in confined metal lines under electric stressing; 5.
Electromigration in Cu interconnect structures; 6. Scaling effects on
microstructure and resistivity of Cu and Co nanointerconnects; Analysis of
electromigration induced stress evolution and voiding in Cu damascene lines
with microstructure; 8. Massive scale statistical studies for
electromigration; 9. Assessment of electromigration damage in large on-chip
power grids. Index.