Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts…mehr
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
1. Preliminary Remarks.- 2. Conceptual Models.- 3. Computational Results.- 4. Experimental Data.- 5. Surface-Science Approach to Schottky Contacts.- 6. Concluding Remarks.- References:.- Reprinted Articles.- Additional Reference.- Reprinted Articles.- Ueber die Stromleitung durch Schwefelmetalle, Pogg. Ann. (1874).- Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern, Physik. Z. (1929).- Halbleitertheorie der Sperrschicht, Naturwissenschaften (1938).- Note on the Contact between a Metal and an Insulator or Semiconductor, Proc. Camb. Phil. Soc. (1938).- Abweichungen vom Ohmschen Gesetz in Halbleitern, Physik. Z. (1940).- Surface States and Rectification at a Metal Semiconductor Contact, Phys. Rev. (1947).- Surface States and Barrier Height of Metal Semiconductor Systems, J. Appl. Phys. (1965).- Theory of Surface States, Phys. Rev. (1965).- Fundamental Transition in the Electronic Nature of Solids, Phys. Rev. Lett. (1969).- Density of States and Barrier Height of Metal-Si Contacts, J. Phys. C: Solid State Physics (1971).- Metal-semiconductor Junctions for (110) Surfaces of Zinc-blende Compunds, Phys. Rev. B (1976).- Electronic Structure of a Metal Semiconductor Interface, Phys. Rev. B (1976).- Ionicity and the Theory of Schottky Barriers, Phys. Rev. B (1977).- Chemical Trends in Metal-semiconductor Barrier Heights, Phys. Rev. B (1978).- Transition in Schottky Barrier Formation with Chemical Reactivity, Phys. Rev. Lett. (1978).- New and Unified Model for Schottky Barrier and III-V Insulator Interface States Formation, J. Vac. Sci. Technol. (1979).- Schottky Barriers: An Effective Work Function Model, AppL Phys. Lett. (1981).- The Foramtion of the Schottky Barrier at the V/Si Interface, J. Vac. Sci. Technol. (1982).- Formation of Ultrathin Single- Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Strucutures, Phys. Rev. Lett. (1983).- Schottky Barrier Heights and the Continuum of Gap States, Phys. Rev. Lett. (1984).- Schottky Barrier Formation at Single-Crystal Metal Semiconductor Interfaces, Phys. Rev. Lett. (1984).- Reflection High-energy Electron Diffraction Study of the Growth of In on GaAs (110) at Different Temperatures, J. Vac. Sci. Tecnol. B (1986).- Direct Variation of Metal-GaAs Schottky Barrier Height by the Influence of Interface S, Se and Te, AppL Phys. Lett. (1985).- Interface Potential Changes and Scottky Barriers, Phys. Rev. B (1985).- Ruthenium-Induced Surface Staes of n-GaAs Surfaces, J. Vac. Sci. Technol. B. (1986).- Metallization and Scottky Barrier Formation, Phys. Rev. B (1986).- On the Present Understanding of Schottky Contacts , Festkörperprobleme (1986).- Role of Virtual Gap States and Defects in Metal Semiconductor Contacts Phys. Rev. Lett. (1987).- Initial Stages of Schottky Barrier Formation: Temperature Effects, J. Vac. Sci. Technol. B (1987).- Kinetics Study of Initial Stage Band Bending at Metal GaAs (110) Interfaces, J. Vac. Sci. Technol. B (1987).- The Schottky Contact in a Xe/Metal Interface Probed by Inverse Photoemission, Europhys. Lett. (1987).- Origin of the Excess Capacitance at Intimate Schottky Contacts, Phys. Rev. Lett. (1988).- Correlation between EfPinning and Development Metallic Character in Ag Overlayers on GaAs (110), Phys. Rev. Lett. (1988).- Direct Investigation of Subsurface Interface Electronic Structure by Ballistic-Electron-Emission Microscopy, Phys. Rev. Lett. (1988).- Chemical Trends in Schottky Barriers: Charge Transfer into Adsorbate Induced Gap States and Defects, Phys. Rev. B (1988).- The Advanced Unified Defect Model forSchottky Barrier Formation, J. Vac. Sci. Technol. B (1988).- Screening and Derealization Effects in Schottky Barrier Formation, J. Vac. Sci. Technol. B (1988).- Tight-Binding Model of Surface Donor-States Induced by Metal Adatoms on GaAs (110) Surfaces, Europhys. Lett. (1988).- Switching of Band Bending at the Nonreactive CsOx/GaAs (110) Interface, Phys. Rev. Lett. (1989).- Metallicity and Gap States in Tunneling to Fe Clusters on GaAs (110), Phys. Rev. Lett. (1989).
1. Preliminary Remarks.- 2. Conceptual Models.- 3. Computational Results.- 4. Experimental Data.- 5. Surface-Science Approach to Schottky Contacts.- 6. Concluding Remarks.- References:.- Reprinted Articles.- Additional Reference.- Reprinted Articles.- Ueber die Stromleitung durch Schwefelmetalle, Pogg. Ann. (1874).- Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern, Physik. Z. (1929).- Halbleitertheorie der Sperrschicht, Naturwissenschaften (1938).- Note on the Contact between a Metal and an Insulator or Semiconductor, Proc. Camb. Phil. Soc. (1938).- Abweichungen vom Ohmschen Gesetz in Halbleitern, Physik. Z. (1940).- Surface States and Rectification at a Metal Semiconductor Contact, Phys. Rev. (1947).- Surface States and Barrier Height of Metal Semiconductor Systems, J. Appl. Phys. (1965).- Theory of Surface States, Phys. Rev. (1965).- Fundamental Transition in the Electronic Nature of Solids, Phys. Rev. Lett. (1969).- Density of States and Barrier Height of Metal-Si Contacts, J. Phys. C: Solid State Physics (1971).- Metal-semiconductor Junctions for (110) Surfaces of Zinc-blende Compunds, Phys. Rev. B (1976).- Electronic Structure of a Metal Semiconductor Interface, Phys. Rev. B (1976).- Ionicity and the Theory of Schottky Barriers, Phys. Rev. B (1977).- Chemical Trends in Metal-semiconductor Barrier Heights, Phys. Rev. B (1978).- Transition in Schottky Barrier Formation with Chemical Reactivity, Phys. Rev. Lett. (1978).- New and Unified Model for Schottky Barrier and III-V Insulator Interface States Formation, J. Vac. Sci. Technol. (1979).- Schottky Barriers: An Effective Work Function Model, AppL Phys. Lett. (1981).- The Foramtion of the Schottky Barrier at the V/Si Interface, J. Vac. Sci. Technol. (1982).- Formation of Ultrathin Single- Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Strucutures, Phys. Rev. Lett. (1983).- Schottky Barrier Heights and the Continuum of Gap States, Phys. Rev. Lett. (1984).- Schottky Barrier Formation at Single-Crystal Metal Semiconductor Interfaces, Phys. Rev. Lett. (1984).- Reflection High-energy Electron Diffraction Study of the Growth of In on GaAs (110) at Different Temperatures, J. Vac. Sci. Tecnol. B (1986).- Direct Variation of Metal-GaAs Schottky Barrier Height by the Influence of Interface S, Se and Te, AppL Phys. Lett. (1985).- Interface Potential Changes and Scottky Barriers, Phys. Rev. B (1985).- Ruthenium-Induced Surface Staes of n-GaAs Surfaces, J. Vac. Sci. Technol. B. (1986).- Metallization and Scottky Barrier Formation, Phys. Rev. B (1986).- On the Present Understanding of Schottky Contacts , Festkörperprobleme (1986).- Role of Virtual Gap States and Defects in Metal Semiconductor Contacts Phys. Rev. Lett. (1987).- Initial Stages of Schottky Barrier Formation: Temperature Effects, J. Vac. Sci. Technol. B (1987).- Kinetics Study of Initial Stage Band Bending at Metal GaAs (110) Interfaces, J. Vac. Sci. Technol. B (1987).- The Schottky Contact in a Xe/Metal Interface Probed by Inverse Photoemission, Europhys. Lett. (1987).- Origin of the Excess Capacitance at Intimate Schottky Contacts, Phys. Rev. Lett. (1988).- Correlation between EfPinning and Development Metallic Character in Ag Overlayers on GaAs (110), Phys. Rev. Lett. (1988).- Direct Investigation of Subsurface Interface Electronic Structure by Ballistic-Electron-Emission Microscopy, Phys. Rev. Lett. (1988).- Chemical Trends in Schottky Barriers: Charge Transfer into Adsorbate Induced Gap States and Defects, Phys. Rev. B (1988).- The Advanced Unified Defect Model forSchottky Barrier Formation, J. Vac. Sci. Technol. B (1988).- Screening and Derealization Effects in Schottky Barrier Formation, J. Vac. Sci. Technol. B (1988).- Tight-Binding Model of Surface Donor-States Induced by Metal Adatoms on GaAs (110) Surfaces, Europhys. Lett. (1988).- Switching of Band Bending at the Nonreactive CsOx/GaAs (110) Interface, Phys. Rev. Lett. (1989).- Metallicity and Gap States in Tunneling to Fe Clusters on GaAs (110), Phys. Rev. Lett. (1989).
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