Emerging Low-Power Semiconductor Devices
Applications for Future Technology Nodes
Herausgeber: Tayal, Shubham; Kumar, Deepak; Kumar Upadhyay, Abhishek
Emerging Low-Power Semiconductor Devices
Applications for Future Technology Nodes
Herausgeber: Tayal, Shubham; Kumar, Deepak; Kumar Upadhyay, Abhishek
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This book will give insight into the emerging semiconductor devices from their applications in electronic circuits. This book discusses the challenges in the field of engineering and applications of advanced low-power devices.
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This book will give insight into the emerging semiconductor devices from their applications in electronic circuits. This book discusses the challenges in the field of engineering and applications of advanced low-power devices.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Produktdetails
- Produktdetails
- Verlag: Taylor & Francis Ltd (Sales)
- Seitenzahl: 294
- Erscheinungstermin: 31. August 2022
- Englisch
- Abmessung: 234mm x 156mm x 19mm
- Gewicht: 608g
- ISBN-13: 9781032147291
- ISBN-10: 1032147296
- Artikelnr.: 64036189
- Herstellerkennzeichnung
- Libri GmbH
- Europaallee 1
- 36244 Bad Hersfeld
- 06621 890
- Verlag: Taylor & Francis Ltd (Sales)
- Seitenzahl: 294
- Erscheinungstermin: 31. August 2022
- Englisch
- Abmessung: 234mm x 156mm x 19mm
- Gewicht: 608g
- ISBN-13: 9781032147291
- ISBN-10: 1032147296
- Artikelnr.: 64036189
- Herstellerkennzeichnung
- Libri GmbH
- Europaallee 1
- 36244 Bad Hersfeld
- 06621 890
Dr. Shubham Tayal is an Assistant Professor in the Department of Electronics and Communication Engineering at SR University, Warangal, India. Dr. Abhishek Kumar Upadhyay s working as Scientific Staff in the Institute for Fundamentals of Electrical Engineering and Electronics, Technische Universität, D-01062, Dresden, Germany. Mr. Deepak Kumar works as Asst. Professor (Senior scale) in the Department of Electrical and Electronics Engineering at University of Petroleum and energy studies (UPES), Dehradun, India. Dr. Shiromani Balmukund Rahi is jointly working with Professor S.C Misra (Indian Institute of Technology Kanpur India) for the development of IoTs for smart applications and Dr Naima Guenifi (LEA Electronics Department, University Mostefa Benboulaid of Algeria) for the development of ultra-low power devices such as Tunnel FETs and Negative Capacitance FETs.
1. Role of TFET Devices and Their Performance Analysis for Wireless Communications. 2. Modeling and Simulation of Emerging Low
Power Devices. 3. Tunnel Field
Effect Transistor: An Energy
Efficient Semiconductor Device. 4. Analytical Modeling of Surface Potential of a Double
Gate Heterostructure PNPN Tunnel FET. 5. Impact of Semiconductor Materials and Architectural Design on TFET Device Performance. 6. Performance Analysis of Emerging Low
Power Junctionless Tunnel FETs. 7. Recent Developments in Schottky Diodes and Their Applications. 8. Numerical Study of a Symmetric Underlap S/D High
¿ Spacer on JAM
GAA FinFET for Low
Power Applications. 9. Potential Prospects of Negative Capicitance Field Effect Transistors. 10. Memory Designing Using Low
Power FETs for Future Technology Nodes. 11. TFET
Based Flash Analog
to
Digital Converter. 12. Demand of Low
Power
Driven FET as Biosensors in Biomedical Applications. 13. 2D Materials for Spin Orbital Torque MRAM: A Path toward Neuromorphic Computing.
Power Devices. 3. Tunnel Field
Effect Transistor: An Energy
Efficient Semiconductor Device. 4. Analytical Modeling of Surface Potential of a Double
Gate Heterostructure PNPN Tunnel FET. 5. Impact of Semiconductor Materials and Architectural Design on TFET Device Performance. 6. Performance Analysis of Emerging Low
Power Junctionless Tunnel FETs. 7. Recent Developments in Schottky Diodes and Their Applications. 8. Numerical Study of a Symmetric Underlap S/D High
¿ Spacer on JAM
GAA FinFET for Low
Power Applications. 9. Potential Prospects of Negative Capicitance Field Effect Transistors. 10. Memory Designing Using Low
Power FETs for Future Technology Nodes. 11. TFET
Based Flash Analog
to
Digital Converter. 12. Demand of Low
Power
Driven FET as Biosensors in Biomedical Applications. 13. 2D Materials for Spin Orbital Torque MRAM: A Path toward Neuromorphic Computing.
1. Role of TFET Devices and Their Performance Analysis for Wireless Communications. 2. Modeling and Simulation of Emerging Low
Power Devices. 3. Tunnel Field
Effect Transistor: An Energy
Efficient Semiconductor Device. 4. Analytical Modeling of Surface Potential of a Double
Gate Heterostructure PNPN Tunnel FET. 5. Impact of Semiconductor Materials and Architectural Design on TFET Device Performance. 6. Performance Analysis of Emerging Low
Power Junctionless Tunnel FETs. 7. Recent Developments in Schottky Diodes and Their Applications. 8. Numerical Study of a Symmetric Underlap S/D High
¿ Spacer on JAM
GAA FinFET for Low
Power Applications. 9. Potential Prospects of Negative Capicitance Field Effect Transistors. 10. Memory Designing Using Low
Power FETs for Future Technology Nodes. 11. TFET
Based Flash Analog
to
Digital Converter. 12. Demand of Low
Power
Driven FET as Biosensors in Biomedical Applications. 13. 2D Materials for Spin Orbital Torque MRAM: A Path toward Neuromorphic Computing.
Power Devices. 3. Tunnel Field
Effect Transistor: An Energy
Efficient Semiconductor Device. 4. Analytical Modeling of Surface Potential of a Double
Gate Heterostructure PNPN Tunnel FET. 5. Impact of Semiconductor Materials and Architectural Design on TFET Device Performance. 6. Performance Analysis of Emerging Low
Power Junctionless Tunnel FETs. 7. Recent Developments in Schottky Diodes and Their Applications. 8. Numerical Study of a Symmetric Underlap S/D High
¿ Spacer on JAM
GAA FinFET for Low
Power Applications. 9. Potential Prospects of Negative Capicitance Field Effect Transistors. 10. Memory Designing Using Low
Power FETs for Future Technology Nodes. 11. TFET
Based Flash Analog
to
Digital Converter. 12. Demand of Low
Power
Driven FET as Biosensors in Biomedical Applications. 13. 2D Materials for Spin Orbital Torque MRAM: A Path toward Neuromorphic Computing.