Energy gap of a Semiconducting diode- Experiment - Ikkurti, Radhika
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It gives brief summary about how energy gap is found and their applications .The electron density is much greater than the hole density in the n-type semiconductor represented as ne >> nh whereas, in the p-type semiconductor, the hole density is much greater than the electron density: nh >> ne.In an n-type semiconductor, the donor energy level is close to the conduction band and away from the valence band. While in the p-type semiconductor, the acceptor energy level is close to the valence band and away from the conduction band.The impurity added in p-type semiconductor provides extra holes…mehr

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Produktbeschreibung
It gives brief summary about how energy gap is found and their applications .The electron density is much greater than the hole density in the n-type semiconductor represented as ne >> nh whereas, in the p-type semiconductor, the hole density is much greater than the electron density: nh >> ne.In an n-type semiconductor, the donor energy level is close to the conduction band and away from the valence band. While in the p-type semiconductor, the acceptor energy level is close to the valence band and away from the conduction band.The impurity added in p-type semiconductor provides extra holes known as Acceptor atoms, whereas in n-type semiconductor impurity provides extra electrons called Donor atoms.The Fermi level of the n-type semiconductor rests between the donor energy level and the conduction band while that of the p-type semiconductor is between the acceptor energy level and the valence band.In the p-type semiconductor, majority carriers move from higher to lower potential, in contrast to the n-type where the majority carriers move from lower to higher potential.
Autorenporträt
Dr.Radhika, Assistenzprofessorin für Physik, Forschung in Physik, 18 Jahre Lehrerfahrung.