Enhancing the Efficiency of Organic Semiconductor Materials
Effect of Electron Withdrawing Groups on Structural, Electro-Optical and Charge Transfer Properties of Furan Derivatives
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Organic semiconductor materials (OSMs) have been intensively investigated due to their application in brighter and thinner displays, low energy consumption devices and integrated systems due to affordable price, large area flexible displays. OSMs are prospective as active layers in microelectronics and optoelectronic applications. The strategy of electron withdrawing groups (EWGs) substitution has demonstrated the fascinating effects to tune the electro-optical and charge transport properties of furan containing OSMs. It was also observed that; the strength of EWDs not only affected the energy...
Organic semiconductor materials (OSMs) have been intensively investigated due to their application in brighter and thinner displays, low energy consumption devices and integrated systems due to affordable price, large area flexible displays. OSMs are prospective as active layers in microelectronics and optoelectronic applications. The strategy of electron withdrawing groups (EWGs) substitution has demonstrated the fascinating effects to tune the electro-optical and charge transport properties of furan containing OSMs. It was also observed that; the strength of EWDs not only affected the energy levels and polarization resulting higher electron affinities, smaller electron reorganization energies, it also enhanced the transfer integrals, intrinsic mobility and photostability significantly. Moreover it was found that substitutions of EWDs at periphery and central core of furan containing OSMs led to efficient balanced hole/electron charge transport properties. It is anticipated thatthe prophecies made by this book would be very beneficial for new-generation microelectronics and optoelectronic applications.
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