Exploration of the Potential Defects in GaN HEMTs - Chen, Hsiang
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What happens inside a GaN HEMT during device operations? Usually,destructive measurements are required to analyze the defect and the carrier trapping - which are the two biggest reliabilty issues in GaN electronics.The novel noninvasive optical characterization techniques provided by this book can visualize the potential defect and the trapping region inside an operating GaN HEMT. The techniques show promise for screening the device failure.

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Produktbeschreibung
What happens inside a GaN HEMT during device
operations? Usually,destructive measurements are
required to analyze the defect and the carrier
trapping - which are the two biggest reliabilty
issues in GaN electronics.The novel noninvasive
optical characterization techniques provided by this
book can visualize the potential defect and the
trapping region inside an operating GaN HEMT. The
techniques show promise for screening the device
failure.
Autorenporträt
Hsiang Chen received the PhD degree in electrical engineering at
University of California, Irvine. He is a faculty member in the
electrical engineering department and the applied materials and
optoelectronic engineering department at National Chi Nan
University, Taiwan (R.O.C.).