Andere Kunden interessierten sich auch für
![Physics of High-Speed Transistors]( "Physics of High-Speed Transistors")
Physics of High-Speed Transistors125,99 €![Fabrication and Electrical Characterization of Molecular Junctions]( "Fabrication and Electrical Characterization of Molecular Junctions")
Fabrication and Electrical Characterization of Molecular Junctions38,99 €![Electrochemical Nanotechnologies]( "Electrochemical Nanotechnologies")
Electrochemical Nanotechnologies110,99 €![Tailoring of Properties of Sulfide Semiconductors in Nanoforms]( "Tailoring of Properties of Sulfide Semiconductors in Nanoforms")
Tailoring of Properties of Sulfide Semiconductors in Nanoforms51,99 €![Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors]( "Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors")
Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors37,99 €![Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors]( "Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors")
Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors37,99 €![Interface Engineering in Organic Field-Effect Transistors]( "Interface Engineering in Organic Field-Effect Transistors")
Interface Engineering in Organic Field-Effect Transistors95,99 €
Recently, a variety of physical and chemical
methods have been used to synthesize and obtain 1-
dimensional semiconductor nanostructures. For the
cause of easier nanostructure formation and device
applications, we begin this study with the
investigation in growth mechanism and well-
controlled condition to synthesize 1-dimensional ZnO
nanowires.
For the low dimensional structure of nanowire,
the manipulation of individual nanowire has become
an unsettled and crucial issue. Therefore, we use a
printing method to realize the nanowire alignment in
broad classes. In addition, our investigators would
explore the correlation between the quality of 1-
dimensional material and electronic transport
properties of ZnO nanowire-based transistors.
In the fabrication of nanowire transistors, the
existing common method of dielectrophoresis (DEP)
process would impose a contact problem, and an
additional or subsequent metallization is necessary
for the electronic connection. Therefore, we will
develop a novel method to simultaneously obtain
aligned nanowire arrays and device pattering by
combining DEP and imprinting processes.
methods have been used to synthesize and obtain 1-
dimensional semiconductor nanostructures. For the
cause of easier nanostructure formation and device
applications, we begin this study with the
investigation in growth mechanism and well-
controlled condition to synthesize 1-dimensional ZnO
nanowires.
For the low dimensional structure of nanowire,
the manipulation of individual nanowire has become
an unsettled and crucial issue. Therefore, we use a
printing method to realize the nanowire alignment in
broad classes. In addition, our investigators would
explore the correlation between the quality of 1-
dimensional material and electronic transport
properties of ZnO nanowire-based transistors.
In the fabrication of nanowire transistors, the
existing common method of dielectrophoresis (DEP)
process would impose a contact problem, and an
additional or subsequent metallization is necessary
for the electronic connection. Therefore, we will
develop a novel method to simultaneously obtain
aligned nanowire arrays and device pattering by
combining DEP and imprinting processes.