Giuliana Impellizzeri

Broschiertes Buch

Fluorine enriched silicon: properties and advantages

Interaction between point defects, fluorine and boron atoms in crystalline silicon

Beschreibung

Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population.

Autor

Ph.D. Degree in Physics (cum laude) from the University ofCatania, Italy. Since 2004 she works as researcher at theMATIS-IMM centre of the CNR on group IV advanced materials formicroelectronics. She is author of about 70 articles published ininternational referred scientific journals and Editor of an issueof Nucl. Instrum. Methods B (2007).

Produktdetails

• Verlag: LAP Lambert Academic Publishing
• Seitenzahl: 120
• Erscheinungstermin: 16. November 2010
• Englisch
• Abmessung: 220mm x 150mm x 8mm
• Gewicht: 175g
• ISBN-13: 9783843374088
• ISBN-10: 3843374082
• Artikelnr.: 32459909