Andere Kunden interessierten sich auch für
![Fundamental Concept of Bipolar Junction Transistor in Electronics]( "Fundamental Concept of Bipolar Junction Transistor in Electronics")
Fundamental Concept of Bipolar Junction Transistor in Electronics29,99 €![Applications of Fundamental Electronics and Integrated Circuits]( "Applications of Fundamental Electronics and Integrated Circuits")
Applications of Fundamental Electronics and Integrated Circuits53,99 €![Electrical Measurements and Meter Testing: A Book in Plain English for the Student and Practical Man--Fundamental Theory, Practical Applications and E]( "Electrical Measurements and Meter Testing: A Book in Plain English for the Student and Practical Man--Fundamental Theory, Practical Applications and E")
Electrical Measurements and Meter Testing: A Book in Plain English for the Student and Practical Man--Fundamental Theory, Practical Applications and E38,99 €![Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices]( "Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices")
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices126,99 €![Wireless Communication-the fundamental and advanced concepts]( "Wireless Communication-the fundamental and advanced concepts")
Wireless Communication-the fundamental and advanced concepts131,99 €![Fundamental Generation Systems]( "Fundamental Generation Systems")
Fundamental Generation Systems171,99 €![Fundamental Aspects of Silicon Oxidation]( "Fundamental Aspects of Silicon Oxidation")
Fundamental Aspects of Silicon Oxidation83,99 €
In this book, stress dependent thermal wet oxide growth process is described. The oxidation rate of silicon is function of the crystal orientation and the angle of the plane intersection. The silicon surface micromachining processes are described to make a freestanding mechanical structure and unique three-dimensional features. A bulk micromachining and etchant has to be considered during microfabrication.Schematic and SEM micrograph described as metal (aluminum) sputtered on oxide pyramidal cantilever probe to form metallic nano-aperture as well. The theoretical concept of near-field and far-field were explained with the help of fabricated triangular and rectangular NSOM cantilevers array with NSOM probe. In order to reduce the noise level and high optical transmission through the probe, the designed NSOM cantilever probe has bulk Si underneath the probe. To characterize major component for cantilevers are optical transmission through the NSOM probe and resonance frequency. Resonance frequency of the cantilevers is varies with its dimensions.Optical transmission is measured through NSOM cantilevers probe aperture.