Fundamental Physics of Amorphous Semiconductors

Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8¿11, 1980
Herausgegeben von Yonezawa, F.

• Broschiertes Buch

Produktbeschreibung

The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon ductor group in Japan. A few years ago, we started to organize an interna tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.

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Produktdetails

• Springer Series in Solid-State Sciences .25
• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 978-3-642-81606-2
• Softcover reprint of the original 1st ed. 1981
• Seitenzahl: 196
• Erscheinungstermin: 30. Dezember 2011
• Englisch
• Abmessung: 235mm x 155mm x 11mm
• Gewicht: 306g
• ISBN-13: 9783642816062
• ISBN-10: 3642816061
• Artikelnr.: 36119524

Inhaltsangabe

What are Non-Crystalline Semiconductors.- Defects in Covalent Amorphous Semiconductors.- Surface Effects and Transport Properties in Thin Films of Hydrogenated Silicon.- The Past, Present and Future of Amorphous Silicon.- Doping and the Density of States of Amorphous Silicon.- The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon.- New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs.- Chemical Bonding of Alloy Atoms in Amorphous Silicon.- Photo-Induced Phenomena in Amorphous Semiconductors.- Theory of Electronic Properties of Amorphous Semiconductors.- Some Problems of the Electron Theory of Disordered Semiconductors.- The Anderson Localisation Problem.- Summary Talk.- Seminars Given During the KSI '80.- Photograph of the Participants of the KSI '80.- List of Participants.