Introducing the building blocks of high-frequency ICs in a systematic manner for senior undergraduate and graduate students and practising circuit engineers. Design examples and problems are plentiful, and key issues encountered in real-world design scenarios are addressed.
Introducing the building blocks of high-frequency ICs in a systematic manner for senior undergraduate and graduate students and practising circuit engineers. Design examples and problems are plentiful, and key issues encountered in real-world design scenarios are addressed.Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Duran Leblebici is Professor Emeritus of Electrical and Electronics Engineering at Istanbul Technical University (ITU). He has been teaching a range of undergraduate and graduate courses, from device electronics and fabrication to integrated electronic circuits and RF IC design, for over 40 years. He is the author of three textbooks in the field of electronics. He also established the first microelectronics laboratory in Turkey in 1975 and the first VLSI Design House in 1991. He received the Distinguished Service Award of the Turkish Scientific and Technological Research Council (TUBITAK) in 1992, in recognition of his services to microelectronics education.
Inhaltsangabe
Preface 1. Components of analog CMOS ICs 2. Basic MOS amplifiers: DC and low frequency behavior 3. High frequency behavior of basic amplifiers 4. Frequency selective RF circuits 5. LC oscillators 6. Signal converters for high frequencies (radio frequencies) Appendices: A. Mobility degradation due to the transversal field B. BSIM3 parameters of AMS 0.35 micron CMOS technology C. Important parameters of 0.35 micron CMOS technology for hand calculations D. Current sources and current mirrors Index.
Preface 1. Components of analog CMOS ICs 2. Basic MOS amplifiers: DC and low frequency behavior 3. High frequency behavior of basic amplifiers 4. Frequency selective RF circuits 5. LC oscillators 6. Signal converters for high frequencies (radio frequencies) Appendices: A. Mobility degradation due to the transversal field B. BSIM3 parameters of AMS 0.35 micron CMOS technology C. Important parameters of 0.35 micron CMOS technology for hand calculations D. Current sources and current mirrors Index.
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