Yuan Taur (San Diego University of California), Tak H. Ning

Fundamentals of Modern VLSI Devices

• Gebundenes Buch

Produktbeschreibung

A thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.

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Produktdetails

• Verlag: Cambridge University Press
• 3 Revised edition
• Seitenzahl: 622
• Erscheinungstermin: 2. Dezember 2021
• Englisch
• Abmessung: 252mm x 179mm x 35mm
• Gewicht: 1318g
• ISBN-13: 9781108480024
• ISBN-10: 1108480020
• Artikelnr.: 62038691

Autorenporträt

Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow.

Inhaltsangabe

Prefaces
Physical constants and unit conversions
List of symbols
1. Introduction
2. Basic device physics
3. p-n junctions and metal-silicon contacts
4. MOS capacitors
5. MOSFETs: long channel
6. MOSFETs: short channel
7. Silicon-on-insulator and double-gate MOSFETs
8. CMOS performance factors
9. Bipolar devices
10. Bipolar device design
11. Bipolar performance factors
12. Memory devices
References
Index.