Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for satellites. This book covers GaN from the fundamental physics to the fabrication of devices and circuits that are already foreseen to replace standard silicon or gallium arsenide (GaAs) in many applications.
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for satellites. This book covers GaN from the fundamental physics to the fabrication of devices and circuits that are already foreseen to replace standard silicon or gallium arsenide (GaAs) in many applications.
Farid Medjdoub is a CNRS senior scientist at IEMN in France. He earned his Ph.D in electrical engineering from the University of Lille in 2004, and worked as a research associate at the University of Ulm in Germany before joining IMEC. Medjdoub's research interests include the design, fabrication, and characterization of innovative GaN-based devices. He is the author and co-author of more than 100 articles, and holds several patents deriving from his research. In addition, he serves as a reviewer for IEEE journals, is a TPC member in several conferences, and is part of the French observatory of wide-bandgap devices. Krzysztof (Kris) Iniewski manages R&D at Redlen Technologies, Inc., Vancouver, Canada. He is also the president of CMOS Emerging Technologies Research, Inc. (www.cmosetr.com). Iniewski has held numerous faculty and management positions at the University of Toronto, University of Alberta, SFU, and PMC-Sierra, Inc. He has written and edited several books for numerous publications including CRC Press, published more than 100 articles in international journals and conferences, and holds numerous international patents. He is also a frequent invited speaker and has consulted for multiple organizations internationally. His personal goal is to contribute to healthy living and sustainability through innovative engineering solutions.
Inhaltsangabe
GaN High Voltage Power Devices. AlGaN/GaN High Electron Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy. Gallium Nitride Transistors on Large Diameter Si (111) Substrate. GaN HEMT Scaling Technologies for High Frequency RF and Mixed Signal Applications. Group III Nitride Microwave Monolithically Integrated Circuits. GaN Based Metal/Insulator/Semiconductor Type Schottky. Hydrogen Sensors. InGaN Based Solar Cells. III Nitride Semiconductors: New Infrared Intersubband Technologies. Gallium Nitride Based Interband Tunnel Junctions. Trapping and Degradation Mechanisms in GaN Based HEMTs.
GaN High Voltage Power Devices. AlGaN/GaN High Electron Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy. Gallium Nitride Transistors on Large Diameter Si (111) Substrate. GaN HEMT Scaling Technologies for High Frequency RF and Mixed Signal Applications. Group III Nitride Microwave Monolithically Integrated Circuits. GaN Based Metal/Insulator/Semiconductor Type Schottky. Hydrogen Sensors. InGaN Based Solar Cells. III Nitride Semiconductors: New Infrared Intersubband Technologies. Gallium Nitride Based Interband Tunnel Junctions. Trapping and Degradation Mechanisms in GaN Based HEMTs.
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