T.C. McGill (ed.) / C.M. Sotomayor Torres / W. Gebhardt

Growth and Optical Properties of Wide-Gap II-VI Low-Dimensional Semiconductors

Herausgegeben von McGill, T.C.; Sotomayor Torres, C.M.; Gebhardt, W.

• Gebundenes Buch

Produktbeschreibung

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

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Produktdetails

• NATO Science Series B .200
• Verlag: Springer, Berlin
• 1989.
• Seitenzahl: 349
• Erscheinungstermin: 1. August 1989
• Englisch
• Gewicht: 810g
• ISBN-13: 9780306432217
• ISBN-10: 0306432218
• Artikelnr.: 24409804

Inhaltsangabe

1: Prospects And Considerations for Wide Gap II VI Devices.- Optoelectronic Devices from Wide Band Gap II VI Semiconductors.- Recent Development Trends in Thin Film Electroluminescent Displays.- Considerations for Blue-Green Optoelectronics Based on Epitaxial ZnSe/ZnS.- Blue Electroluminescent Devices Based on Low Resistive p-Type ZnSe.- Prospects for II VI Heterojunction Light Emitting Diodes.- II VI Heterostructures and Multi-Quantum Wells.- 2: 3D Growth of Wide-Gap II VI Semiconductors.- A Review of the Growth of 3D II VI Compounds.- The Growth of Thin Layers by MOCVD of Wide Band Gap II VI Compounds.- Optical Studies of ZnXTE(X=Mn,Hg) Alloys.- Electrical and Structural Properties of Wide Bandgap II VI Semiconducting Compounds.- 3: Excitons, Doping and Impurities in Wide Gap II VI Semiconductors.- Some Aspects of Impurities in Wide Band II VI Compounds.- Conductivity Control of Wide Gap II VI Compounds.- Photoassisted Doping of II VI Semiconductor Films.- Excitonic Complexes in Wide-Gap II VI Semiconductors.- Optical Properties of Bulk II VI Semiconductors: Effect of Shallow Donor States.- 4: Non-Linear Optical Properties of Wide Gap II VI Semiconductors.- Review of Nonlinear Optical Processes in Wide Gap II VI Compounds.- Optical Nonlinearities, Coherence and Dephasing in Wide Gap II VI Semiconductors.- Frequency Dependence of Interband Two-Photon Absorption Mechanisms in ZnO and ZnS.- II VI Semiconductor-Doped Glass: Nonlinear Optical Properties and Devices.- 5: 2D Growth of II VI Semiconductors.- MBE and ALE of II VI Compounds: Growth Processes and Lattice Strain in Heteroepitaxy.- Wide Bandgap II VI Compound Superlattices Prepared by MBE and MOMBE.- II VI/III V Heterointerfaces: Epilayer-on-Epilayer Structures.- Growth of II VI/III V Mixed Heterostructures.- ZnSe Growth on Non-Polar Substrates by Molecular Beam Epitaxy.- Atomic Layer Epitaxy of ZnSe/ZnSxSe1-x Superlattices.- Growth of II VI Semimagnetic Semiconductors by Molecular Beam Epitaxy.- 6: