Wang Kang, Weisheng Zhao

Handbook of Magnetic Random Access Memory

• Gebundenes Buch

Produktbeschreibung

Spintronics is a promising technology as one of the alternatives to the traditional memory technology. MRAM is one of the major applications of Spintronics. The authors offer the first comprehensive book on MRAM. It is structured to be a complete and updated guide for the readers. This book provides an overview of the state of the art, describes industrial applications, and presents original technologies in this rapidly-moving field. It covers aspects from physics, device, circuit, and system to application of MRAM. The book provides the necessary skills, tools and guidelines for different-level MRAM designers. It also summarizes the challenges and prospects of MRAM.

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Produktdetails

• Verlag: Taylor & Francis Inc
• Seitenzahl: 304
• Erscheinungstermin: 1. Januar 2025
• Englisch
• Abmessung: 234mm x 156mm
• ISBN-13: 9781498754699
• ISBN-10: 1498754694
• Artikelnr.: 60001674

Inhaltsangabe

1.2 Challenges of conventional memory technologies 1.3 Non-volatile memory
technologies 1.4 State of the art (roadmap)2. Spintronics fundamentals 2.1
General principles 2.2 Giant MagnetoResistance (GMR) and Magnetic Tunnel
MagnetoResistance (TMR) 2.3 Perpendicular Magnetic Anisotropy 2.4 Spin
Transfer Torque (STT) and Spin Hall Effect (SHE) 2.5 Emerging spin related
phenomena for MRAM3. MRAM 3.1 Field-MRAM 3.2 STT-MRAM 3.3 SHE-MRAM 3.4
Racetrack Memory 3.5 Advanced MRAM concepts4. Device Fabrication 4.1
Introduction of processing tools 4.2 Ultra-thin film deposition 4.3
Nanopillar processing 4.4 Back-end integration with CMOS technology 4.5
Device fabrication status and challenges5. Circuit and architecture designs
5.1 Device modeling and EDA tools for hybrid simulation 5.2 Cell structure
and array organization 5.3 Cell Read/write techniques and Error Correction
Code 5.4 Memory Chip architecture design 5.5 Circuit and architecture
design status and challenges6 Performance evaluation for potential
applications