This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD…mehr
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Professor Zhe Chuan Feng earned his PhD in condensed matter physics from University of Pittsburgh in 1987, and, earlier, BS (1962-68) and MS (1978-81) from the Department of Physics at Peking University. He has worked at Emory University (1988-92), National University of Singapore (1992-94), Georgia Tech (1994-95), EMCORE Corporation (1995-97), Institute of Materials Research & Engineering, Singapore (1998-2001), Axcel Photonics (2001-02), Georgia Tech (2002-03), National Taiwan University (NTU) (2003-20151) as a professor at the Graduate Institute of Photonics & Optoelectronics and the Department of Electrical Engineering; and Guangxi University (GXU) (2015-2020) as a distinguished professor at the School of Physical Science and Technology. After retiring from NTU and GXU and moving back to Georgia, USA, he established the Science Exploring Lab and in January 2022 joined Kennesaw State University as an Adjunct Professor in the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. He has long been devoted to materials research and growth of III-V and II-VI compounds, LED, III-nitrides, SiC, ZnO, GaO and other semiconductors and oxides. Professor Feng has edited twelve review books on compound semiconductors and microstructures, porous Si, SiC and III-nitrides, ZnO devices, and nanoengineering, especially in the 21st century on WBGs: SiC Power Materials: Devices and Applications, Springer (2004); III-Nitride Semiconductor Materials, Imperia College Press (2006); III-Nitride Devices and Nanoengineering, Imperia College Press (2008); Handbook of Zinc Oxides and Related Materials: Volume 1) Materials, and Volume 2) Devices and Nano-Engineering, T&F/CRC (2012); Handbook of Solid-State Lighting and LEDs , T&F/CRC (2017); and III-Nitride Materials, Devices and Nanostructures, World Scientific Publishing (2017). He has authored and co-authored more than 570 scientific papers with more than 420 indexed by Science Citation Index (SCI) and cited more than 6600 times, with h-index:40 and i10-index:152. Among these, he has published more than 50 journal papers and more than 70 conference papers on SiC as well as three review books on SiC. He has been a symposium organizer and invited speaker at numerous international conferences and universities. He has served as a guest editor for special journal issues and has been a visiting or guest professor at Sichuan University, Nanjing Tech University, South China Normal University, Huazhong University of Science & Technology, Nankai University, and Tianjin Normal University. Professor Feng has been a fellow of SPIE since 2013. More details on his academic contributions can be found at https://scholar.google.com/citations?hl=en&user=vdyXZpEAAAAJ and https://www.ee.ntu.edu.tw/profile1.php?teacher_id=941011&p=5.
Inhaltsangabe
Part I: General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974 2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques 3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100) 4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century Part II: SiC Materials Growth and Processing 5. CVD of SiC Epilayers -- Basic Principles and Techniques 6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system 7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties 8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source Part III: SiC Materials Studies and Characterization 9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals 10. Near-Infrared Luminescent Centers in Silicon Carbide 11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry 12. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon Part IV: SiC Devices and Developments 13. 4H-SiC-Based Photodiodes for Ultraviolet Light Detection 14. SiC radiation detector based on metal-insulator-semiconductor structures 15. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction
Part I: General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974 2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques 3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100) 4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century Part II: SiC Materials Growth and Processing 5. CVD of SiC Epilayers -- Basic Principles and Techniques 6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system 7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties 8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source Part III: SiC Materials Studies and Characterization 9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals 10. Near-Infrared Luminescent Centers in Silicon Carbide 11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry 12. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon Part IV: SiC Devices and Developments 13. 4H-SiC-Based Photodiodes for Ultraviolet Light Detection 14. SiC radiation detector based on metal-insulator-semiconductor structures 15. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction
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