Alain C. Diebold (ed.)

Handbook of Silicon Semiconductor Metrology

Herausgeber: Diebold, Alain C.

• Gebundenes Buch

Produktbeschreibung

Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay, acoustic film thickness, dopant dose, junction depth, and electrical measurements; particle and defect detection; and flatness following chemical mechanical polishing. Providing examples of well-developed metrology capability, the book focuses on metrology for lithography, transistor, capacitor, and on-chip interconnect process technologies.

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Produktdetails

• Verlag: CRC Press
• Seitenzahl: 896
• Erscheinungstermin: 29. Juni 2001
• Englisch
• Abmessung: 260mm x 183mm x 52mm
• Gewicht: 1847g
• ISBN-13: 9780824705060
• ISBN-10: 0824705068
• Artikelnr.: 22304844

Autorenporträt

Alain C. Diebold

Inhaltsangabe

Introduction - silicon semiconductor metrology. Part 1 Transistor
fabrication metrology: gate dielectric metrology; metrology for ion
implantation; MOS device characterization; carrier illumination
characterization of ultra-shallow implants;modelling of statistical
manufacturing sensitivity and of process control and metrology requirements
for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of
metrology for on-chip interconnect; metrology for on-chip
interconnectdielectrics; thin film metrology using impulsive stimulated
thermal scattering (ISTS); metal interconnect process control using
picosecond ultrasonics; sheet resistance measurements of interconnect
films; characterization of low dielectric constantmaterials; high
resolution profilometry for CMP and etch metrology. Part 3 Lithography
metrology: critical dimension metrology in the scanning electron
microscope; scanned probe microscope dimensional metrology; electrical DC
metrology and relatedreference materials; metrology of image placement;
scatterometry for semiconductor metrology. Part 4 Defect detection and
characterization: unpatterned wafer defect detection; particle and defect
characterization; calibration of particle detectionsystems. Part 5 Sensor
based metrology: in-situ metrology. Part 6 Data management: metrology data
management and information systems. Part 7 Electrical measurement based
statistical metrology: statistical metrology. Part 8 Overviews of key
measurement andcalibration technology: physics of optical metrology of
silicon based semiconductor devices; UV, VUV and extreme UV spectroscopic
reflectometry and ellipsometry; analysis of thin layer structures by x-ray
reflectometry; ion beam methods; electronmicroscopy based measurement of
feature thickness and calibration of reference materials; status of
lithography at the end of 2000.