Christoph Jungemann, Bernd Meinerzhagen

Hierarchical Device Simulation

The Monte-Carlo Perspective

• Gebundenes Buch

Produktbeschreibung

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

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This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.

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Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.

Produktdetails

• Computational Microelectronics
• Verlag: Springer / Springer Vienna / Springer, Wien
• Artikelnr. des Verlages: 978-3-211-01361-8
• 2003
• Seitenzahl: 284
• Erscheinungstermin: 5. Juni 2003
• Englisch
• Abmessung: 241mm x 160mm x 20mm
• Gewicht: 636g
• ISBN-13: 9783211013618
• ISBN-10: 321101361X
• Artikelnr.: 12146497

Inhaltsangabe

1 Introduction.- References.- 2 Semiclassical Transport Theory.- 2.1 The Boltzmann Transport Equation.- 2.2 Balance Equations.- 2.3 The Microscopic Relaxation Time.- 2.4 Fluctuations in the Steady-State 25 References.- 3 The Monte-Carlo Method.- 3.1 Basic Monte-Carlo Methods.- 3.2 The Monte-Carlo Solver of the Boltzmann Equation.- 3.3 Velocity Autocorrelation Function.- 3.4 Basic Statistics.- 3.5 Convergence Estimation.- References.- 4 Scattering Mechanisms.- 4.1 Phonon Scattering.- 4.2 Alloy Scattering.- 4.3 Impurity Scattering.- 4.4 Impact Ionization by Electrons.- 4.5 Surface Roughness Scattering.- References.- 5 Full-Band Structure.- 5.1 Basic Properties of the Band Structure of Relaxed Silicon.- 5.2 Basic Properties of the Band Structure of Strained SiGe.- 5.3 k-Space Grid.- 5.4 Calculation of the Density of States.- 5.5 Mass Tensor Evaluation.- 5.6 Particle Motion in Phase-Space.- 5.7 Selection of a Final State in k-Space.- References.- 6 Device Simulation.- 6.1 Device Discretization.- 6.2 Band Edges.- 6.3 Poisson Equation.- 6.4 Self-Consistent Device Simulation.- 6.5 Nonlinear Poisson Equation.- 6.6 Nonself-Consistent Device Simulation.- 6.7 Statistical Enhancement.- 6.8 Terminal Current Estimation.- 6.9 Contact Resistance.- 6.10 Normalization of Physical Quantities.- References.- 7 Momentum-Based Transport Models.- 7.1 The Hydrodynamic Model.- 7.2 Small-Signal Analysis.- 7.3 Noise Analysis.- 7.4 The Drift-Diffusion Model.- 7.5 Transport and Noise Parameter Simulation.- References.- 8 Stochastic Properties of Monte-Carlo Device Simulations.- 8.1 Stochastic Error.- 8.2 In-Advance CPU Time Estimation.- References.- 9 Results.- 9.1 N+NN+ and P+PP+ Structures.- 9.2 MOSFETs.- 9.3 SiGe HBTs.- References.