High-K Gate Dielectric Materials
175,99 €
inkl. MwSt.
Versandkostenfrei*
Versandfertig in über 4 Wochen
payback
88 °P sammeln
  • Gebundenes Buch

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).

Andere Kunden interessierten sich auch für
Produktbeschreibung
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).
Autorenporträt
Niladri Pratap Maity, PhD, is an Associate Professor in the Department of Electronics and Communication Engineering at Mizoram University, India. He is the author of more than 110 journal articles and conference papers and the recipient of several best/excellent paper awards. He was a Visiting Scientist at the Department of Science and Technology, Government of India. His research interests include VLSI design, MOS device modeling, and MEMS. Reshmi Maity, PhD, is an Assistant Professor in the Department of Electronics and Communication Engineering, Mizoram University, Aizawl, India. Prior to that, she was an Assistant Professor at the JIS College of Engineering (West Bengal University of Technology) at Kolkata, India. She is the author of more than 80 refereed publications. Her research interests include VLSI design, nanoelectronics, and MEMS. Srimanta Baishya, PhD, is a Professor in the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar, India. Before that, he was an Assistant Professor in the Department of Electronics and Telecommunication Engineering of the same college. His research interests cover semiconductor devices and circuits, MOS transistor modeling, and MEMSbased energy harvesting. He has published over 60 papers in peer-reviewed journals.