Hot-Electron Transport in Semiconductors

Herausgegeben:Reggiani, L.;Mitarbeit:Reggiani, L.; Asche, M.; Canali, C.; Constant, E.; Hess, K.; Iafrate, G. J.; Komijama, S.; Kurosawa, T.; Masumi, T.; Nava, F.; Pozhela, Y. K.

• Broschiertes Buch

Produktdetails

• Topics in Applied Physics 58
• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 978-3-662-30935-3
• Softcover reprint of the original 1st ed. 1985
• Seitenzahl: 296
• Erscheinungstermin: 23. August 2014
• Englisch
• Abmessung: 235mm x 155mm x 17mm
• Gewicht: 452g
• ISBN-13: 9783662309353
• ISBN-10: 3662309351
• Artikelnr.: 41320086

Inhaltsangabe

General theory.- Drift velocity and diffusion coefficients from time-of-flight measurements.- Transport parameters from microwave conductivity and noise measurements.- Multivalued distributions of hot electrons between equivalent valleys.- Streaming motion of carriers in crossed electric and magnetic fields.- Hot electrons in semiconductor heterostructures and superlattices.- Non-steady-state carrier transport in semiconductors in perspective with submicrometer devices.