Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.
Inhaltsangabe
* 1: Hiroshi Amano: Development of the nitride-based UV/DUV LEDs * 2: Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski: The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays * 3: Armin Dadgar and Alois Krost: Epitaxial growth and benefits of GaN on silicon * 4: Ronny Kirste and Zlatko Sitar: The growth of bulk aluminum nitride * 5: Andre Strittmatter: Epitaxial growth of nitride quantum dots * 6: Raphaël Butté, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-François Carlin, and Nicolas Grandjean: Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics * 7: Hideto Miyake: Growth and optical properties of aluminum rich AlGaN heterostructures * 8: Michael Kneissl and Tim Wernicke: Optical and structural properties of InGaN light emitters on non- and semipolar GaN * 9: Rudeesun Songmuang and Eva Monroy: GaN-based single-nanowire devices * 10: Jean Yves Duboz: Advanced photonic and nanophotonic devices * 11: Yvon Cordier, Tatsuya Fujishima, Bin Lu, Elison Matioli, and Tomás Palacios: Nitride-based electron devices for high power / high frequency applications * 12: Maria Tchernycheva and François Julien: Intersubband transitions in low dimensional nitrides * 13: Tatiana V. Shubina, Mikhail M. Glazov, Nikolay A. Gippius, and Bernard Gil: The slow light in gallium nitride * 14: Csilla Gergely: Nitride devices and their biofunctionalization for biosensing applications * 15: Walter R. L. Lambrecht and Atchara Punya: Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides * 16: O. Kyriienko, I.A. Shelykh, and Alexey V. Kavokin: Terahertz emission in polaritonic systems with nitrides
* 1: Hiroshi Amano: Development of the nitride-based UV/DUV LEDs * 2: Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski, and Sylwester Porowski: The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays * 3: Armin Dadgar and Alois Krost: Epitaxial growth and benefits of GaN on silicon * 4: Ronny Kirste and Zlatko Sitar: The growth of bulk aluminum nitride * 5: Andre Strittmatter: Epitaxial growth of nitride quantum dots * 6: Raphaël Butté, Gatien Cosendey, Lorenzo Lugani, Marlene Glauser, Antonino Castiglia, Guillaume Perillat-Merceroz, Jean-François Carlin, and Nicolas Grandjean: Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics * 7: Hideto Miyake: Growth and optical properties of aluminum rich AlGaN heterostructures * 8: Michael Kneissl and Tim Wernicke: Optical and structural properties of InGaN light emitters on non- and semipolar GaN * 9: Rudeesun Songmuang and Eva Monroy: GaN-based single-nanowire devices * 10: Jean Yves Duboz: Advanced photonic and nanophotonic devices * 11: Yvon Cordier, Tatsuya Fujishima, Bin Lu, Elison Matioli, and Tomás Palacios: Nitride-based electron devices for high power / high frequency applications * 12: Maria Tchernycheva and François Julien: Intersubband transitions in low dimensional nitrides * 13: Tatiana V. Shubina, Mikhail M. Glazov, Nikolay A. Gippius, and Bernard Gil: The slow light in gallium nitride * 14: Csilla Gergely: Nitride devices and their biofunctionalization for biosensing applications * 15: Walter R. L. Lambrecht and Atchara Punya: Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides * 16: O. Kyriienko, I.A. Shelykh, and Alexey V. Kavokin: Terahertz emission in polaritonic systems with nitrides
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