This book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.
This book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.
Dr. Nan Guo received his B.S. degree in Condensed Matter Physics from Nankai University in 2010, and Ph.D. degree (with honors) in Microelectronics and Solid State Electronics from Shanghai Institute of Technical Physics, Chinese Academy of Sciences in 2015. He is currently an Assistant Professor on fabrication and characterization of infrared photodetectors in Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology.
Inhaltsangabe
Introduction and Background.- Photovoltaic and photo-thermoelectric effects in Graphene photodetector.- Multispectral active infrared imaging by Graphene photodetector.- Anomalous responsivity in InAs nanowire phototransistors based on majority carrier transport.- Two-dimensional material/nanowire hybrid photodetector.- Conclusion and Prospect.
Introduction and Background.- Photovoltaic and photo-thermoelectric effects in Graphene photodetector.- Multispectral active infrared imaging by Graphene photodetector.- Anomalous responsivity in InAs nanowire phototransistors based on majority carrier transport.- Two-dimensional material/nanowire hybrid photodetector.- Conclusion and Prospect.
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