This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive…mehr
This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981-1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and Chinese Academy of Science (Beijing, PRC) since 2016. A recipient of several awards and honors, and erstwhile associate editor of the IEEE Transactions on Electron Devices (2008-2014), Prof. Deleonibus is research director of the CEA since 2002, a distinguished lecturer at IEEE since 2004, and a fellow of the IEEE since 2006 and of the Electrochemical Society since 2015.
Inhaltsangabe
Advanced Silicon-Based CMOS Technologies. From Planar to Trigate and Nanowires Fully Depleted Transistors. Schottky Source/Drain MOSFETs. Advances in Silicon-On-Diamond Technology. GeOI, SiGeOI and New Devices Architectures. 3D Monolithic Integration. III-V Quantum-Well FETs. Carbon Integrated Electronics. New Paths to Augmented Silicon CMOS Technologies. Tunneling Field-Effect Transistors - Challenges and Perspectives. Molecular Memories. Resistive Memories. High frequency vibrating nanowire. Spintronics. Smart Multiphysics Sensors. 3D Integration and Wafer Level Packaging.
Advanced Silicon-Based CMOS Technologies. From Planar to Trigate and Nanowires Fully Depleted Transistors. Schottky Source/Drain MOSFETs. Advances in Silicon-On-Diamond Technology. GeOI, SiGeOI and New Devices Architectures. 3D Monolithic Integration. III-V Quantum-Well FETs. Carbon Integrated Electronics. New Paths to Augmented Silicon CMOS Technologies. Tunneling Field-Effect Transistors - Challenges and Perspectives. Molecular Memories. Resistive Memories. High frequency vibrating nanowire. Spintronics. Smart Multiphysics Sensors. 3D Integration and Wafer Level Packaging.
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