Andere Kunden interessierten sich auch für
![Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys]( "Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys")
Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys60,99 €![Optical Characterization and Modeling of Compositionally Matched Indium Arsenide-Antimonide Bulk and Multiple Quantum Well Semiconductors]( "Optical Characterization and Modeling of Compositionally Matched Indium Arsenide-Antimonide Bulk and Multiple Quantum Well Semiconductors")
Optical Characterization and Modeling of Compositionally Matched Indium Arsenide-Antimonide Bulk and Multiple Quantum Well Semiconductors60,99 €![Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys]( "Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys")
Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys63,99 €![Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors]( "Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors")
Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors61,99 €![The Optical Properties of Some Petroleum Products]( "The Optical Properties of Some Petroleum Products")
The Optical Properties of Some Petroleum Products64,99 €![The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures]( "The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures")
The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures63,99 €![Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures]( "Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures")
Optical Properties of Si, Ge, GaAs, GaSb, InAs, and InP at Elevated Temperatures63,99 €
Bulk grown III-V ternary semiconductors of In0.08Ga0.92Sb and In0.15Ga0.85As were investigated through Hall-effect and photoluminescence measurements to determine carrier concentration, mobility, sheet resistivity, and luminescence spectrum. In the past, epitaxial layers of ternary compounds have been grown on binary compound substrates, and thus very limited lattice matched ternary alloys were available. Recently, bulk grown ternary substrates have been developed, and it has presented a renewed interest in using these substrates to grow high quality ternary compounds for use in many next generation optoelectronic devices. The results of photoluminescence (PL) study for the In0.15Ga0.85Sb sample show the exciton bound to neutral acceptor (Ao,X) transition peak at 0.675 eV along with a donor-shallow acceptor pair transitions at 0.650 eV, and the donor-deep acceptor pair transition peak at 0.628 eV.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.