Andere Kunden interessierten sich auch für
![Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors]( "Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors")
Temperature Dependent Current-Voltage Measurements of Neutron Irradiated Al0.27ga0.73n/Gan Modulation Doped Field Effect Transistors60,99 €![An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors]( "An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors")
An Analysis of the Effects of Low Energy Electron Radiation on A1xga1-Xn/Gan Modulation-Doped Field-Effect Transistors60,99 €![Electrical Activation Studies of Silicon Implanted Alxga1-Xn and Coimplanted Gan]( "Electrical Activation Studies of Silicon Implanted Alxga1-Xn and Coimplanted Gan")
Electrical Activation Studies of Silicon Implanted Alxga1-Xn and Coimplanted Gan60,99 €![Optical Investigation of Molecular Beam Epitaxy Alxga1-Xn to Determine Material Quality]( "Optical Investigation of Molecular Beam Epitaxy Alxga1-Xn to Determine Material Quality")
Optical Investigation of Molecular Beam Epitaxy Alxga1-Xn to Determine Material Quality60,99 €![Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors]( "Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors")
Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors60,99 €![Computational Modeling of a Time-independent, Heterogeneous Reactor Core Using Simplified Discrete Ordinates Neutron Transport Techniques]( "Computational Modeling of a Time-independent, Heterogeneous Reactor Core Using Simplified Discrete Ordinates Neutron Transport Techniques")
Computational Modeling of a Time-independent, Heterogeneous Reactor Core Using Simplified Discrete Ordinates Neutron Transport Techniques62,99 €![Temperature and Hydrostatic Pressure Dependence of the U-center and the Far Infrared Properties of Polyamino Acids]( "Temperature and Hydrostatic Pressure Dependence of the U-center and the Far Infrared Properties of Polyamino Acids")
Temperature and Hydrostatic Pressure Dependence of the U-center and the Far Infrared Properties of Polyamino Acids61,99 €
The gate current of Al27Ga73N/GaN heterogeneous field effect transistors (HFETs) is investigated using current-voltage (IV) and current-temperature (IT) measurement demonstrating that trap assisted tunneling (TAT) is the primary current mechanism. Excellent fit to experimental data is achieved using a thermionic trap assisted tunneling (TTT) model. A single value for each of the primary parameters (Schottky barrier height, trap energy, donor density and trap density) results in a sigma of 1.38x10-8 A for IT data measured at five voltages between 85K and 290K and for IV data measured at three temperatures between 0.0 V and -4.0 V. High energy (gt;0.5 MeV) neutron irradiation at fluences between 4.0x1010 and 1.2x1012 n/cm2 confirms an increase of gate current with fluence. A change in IV characteristics, interpreted as an increase in magnitude of threshold voltage, is also observed.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.
Hinweis: Dieser Artikel kann nur an eine deutsche Lieferadresse ausgeliefert werden.