Ion beam analysis of wide bandgap semiconductor heterostructures - Redondo-Cubero, Andrés
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Ion beam techniques are powerful methods to characterize and modify semiconductor materials. This book shows the application of these techniques to the study of wide bangdap semiconductor heterostructures including GaN-based and ZnO-based materials. These materials are the basis of the most promising high electron mobility transistors and high-power optoelectronic devices, but the continuous road towards miniaturization requires accurate techniques to control the epitaxial growth of these crystalline layers. This book explores the advantages and limits of ion beam techniques for the structural…mehr

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Produktbeschreibung
Ion beam techniques are powerful methods to characterize and modify semiconductor materials. This book shows the application of these techniques to the study of wide bangdap semiconductor heterostructures including GaN-based and ZnO-based materials. These materials are the basis of the most promising high electron mobility transistors and high-power optoelectronic devices, but the continuous road towards miniaturization requires accurate techniques to control the epitaxial growth of these crystalline layers. This book explores the advantages and limits of ion beam techniques for the structural and compositional characterization in such nanostructures. The fundamentals and applications of Rutherford backscattering spectrometry under channelling conditions are extensively discussed throughout several heterostructures as an alternative and complement to X-ray diffraction methods.
Autorenporträt
Born in Madrid (Spain), got his Physics and Mathematics degrees at the Autonomous University of Madrid, where he also got the Ph.D. in 2010. He is an expert in ion beam techniques for the characterization and modification of semiconductors materials. He is researcher at the Technical University of Lisbon.